All MOSFET. SUD50N03-06P Datasheet

 

SUD50N03-06P Datasheet and Replacement


   Type Designator: SUD50N03-06P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 84 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 565 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-252
      - MOSFET Cross-Reference Search

 

SUD50N03-06P Datasheet (PDF)

 ..1. Size:63K  vishay
sud50n03-06p.pdf pdf_icon

SUD50N03-06P

SUD50N03-06PVishay SiliconixN-Channel 30-V (D-S) 175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175 _C Junction TemperatureVDS (V) rDS(on) (W) ID (A)bD Optimized for Low-Side Synchronous Rectifier *Operation0.0065 at VGS = 10 V 84b3030 D 100 % Rg Tested0.0095 at VGS = 4.5 V 59bAPPLICATIONSD DC/DC ConvertersD Synchronous RectifiersTO-252DDr

 3.1. Size:90K  vishay
sud50n03-06ap.pdf pdf_icon

SUD50N03-06P

SUD50N03-06APNew ProductVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, e Qg (Typ)D Optimized for LowSide SynchronousRectifier Operation0.0057 @ VGS = 10 V 90 RoHS30 3030 30COMPLIANTD 100% Rg Tested0.0078 @ VGS = 4.5 V 77APPLICATIONSD DC/DC ConvertersD Synchronous RectifiersTO-252D

 4.1. Size:95K  vishay
sud50n03-07.pdf pdf_icon

SUD50N03-06P

SUD50N03-07Vishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 175_C Maximum Junction TemperatureD 100% Rg Tested0.007 @ VGS = 10 V 2030300.010 @ VGS = 4.5 V 16DTO-252GDrain Connected to TabG D STop ViewOrdering Information: SSUD50N03-07SUD50N03-07E3 ( Lead Free) N-Channel MOS

 4.2. Size:149K  vishay
sud50n03-09p.pdf pdf_icon

SUD50N03-06P

SUD50N03-09PVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)bAvailable Optimized for High- or Low-Side0.0095 at VGS = 10 V 63bRoHS* 100 % Rg Tested30COMPLIANT0.014 at VGS = 4.5 V 52bAPPLICATIONS DC/DC Converters Synchronous RectifiersTO-252DDrain Connected to T

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STW69N65M5-4 | STW65N80K5 | STW75NF30 | SUD08P06-155L-GE3

Keywords - SUD50N03-06P MOSFET datasheet

 SUD50N03-06P cross reference
 SUD50N03-06P equivalent finder
 SUD50N03-06P lookup
 SUD50N03-06P substitution
 SUD50N03-06P replacement

 

 
Back to Top

 


 
.