SUD50N04-37P Todos los transistores

 ..1. Size:173K  vishay
 sud50n04-37p.pdf

New Product SUD50N04-37P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested RoHS 0.037 at VGS = 10 V 8 40 5.3 nC COMPLIANT 0.046 at VGS = 4.5 V 8 APPLICATIONS Backlight Inverter for LCD Display Full Bridge DC/DC Converter TO-252 D G Drain Connected t

 5.1. Size:146K  vishay
 sud50n04-16p.pdf

SUD50N04-16P Vishay Siliconix N-Channel 40-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.016 at VGS = 10 V 20 COMPLIANT 40 15.6 nC 0.018 at VGS = 4.5 V 20 APPLICATIONS LCD TV Inverter Secondary Synchronous Rectification TO-252 D G Drain Connected to

 5.2. Size:177K  vishay
 sud50n04-8m8p.pdf

SUD50N04-8m8P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0088 at VGS = 10 V 50 TrenchFET Power MOSFET 40 16 nC 0.0105 at VGS = 4.5 V 50 100 % UIS Tested 100 % Rg Tested PWM Optimized Compliant to RoHS Directive 2002/95/EC A

 5.3. Size:69K  vishay
 sud50n04-05l.pdf

New Product SUD50N04-05L Vishay Siliconix N-Channel 40-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( ) ID (A)c 175 C Junction Temperature 0.0054 at VGS = 10 V RoHS 115 40 COMPLIANT 0.0069 at VGS = 4.5 V 102 D TO-252 G Drain Connected to Tab G D S Top View S Ordering Information SUD50N04-05L-E3 (Lead (Pb)

 5.4. Size:75K  vishay
 sud50n04-09h.pdf

SUD50N04-09H Vishay Siliconix N-Channel 40-V (D-S), 175 C MOSFET FEATURES TrenchFET Power MOSFETS PRODUCT SUMMARY 175 C Junction Temperature V(BR)DSS (V) rDS(on) ( ) ID (A)c Qg (Typ) RoHS High Threshold Voltage At High Temperature COMPLIANT 0.009 at VGS = 10 V 40 50 55 TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information SUD50N04-

 5.5. Size:1428K  cn vbsemi
 sud50n04-8m8p.pdf

SUD50N04-8M8P www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIM