All MOSFET. SUD50N04-37P Datasheet

 

SUD50N04-37P MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUD50N04-37P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 10.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.7 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 73 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: TO-252

 SUD50N04-37P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUD50N04-37P Datasheet (PDF)

 ..1. Size:173K  vishay
 sud50n04-37p.pdf

SUD50N04-37P SUD50N04-37P

New ProductSUD50N04-37PVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ.) 100 % UIS TestedRoHS 0.037 at VGS = 10 V 840 5.3 nC COMPLIANT 0.046 at VGS = 4.5 V 8APPLICATIONS Backlight Inverter for LCD Display Full Bridge DC/DC ConverterTO-252DGDrain Connected t

 5.1. Size:146K  vishay
 sud50n04-16p.pdf

SUD50N04-37P SUD50N04-37P

SUD50N04-16PVishay SiliconixN-Channel 40-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.016 at VGS = 10 V 20COMPLIANT 40 15.6 nC0.018 at VGS = 4.5 V 20APPLICATIONS LCD TV Inverter Secondary Synchronous RectificationTO-252DGDrain Connected to

 5.2. Size:177K  vishay
 sud50n04-8m8p.pdf

SUD50N04-37P SUD50N04-37P

SUD50N04-8m8PVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0088 at VGS = 10 V 50 TrenchFET Power MOSFET40 16 nC0.0105 at VGS = 4.5 V 50 100 % UIS Tested 100 % Rg Tested PWM Optimized Compliant to RoHS Directive 2002/95/ECA

 5.3. Size:69K  vishay
 sud50n04-05l.pdf

SUD50N04-37P SUD50N04-37P

New ProductSUD50N04-05LVishay SiliconixN-Channel 40-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)c 175 C Junction Temperature0.0054 at VGS = 10 V RoHS 11540 COMPLIANT 0.0069 at VGS = 4.5 V 102DTO-252GDrain Connected to TabG D STop ViewSOrdering Information: SUD50N04-05L-E3 (Lead (Pb)

 5.4. Size:75K  vishay
 sud50n04-09h.pdf

SUD50N04-37P SUD50N04-37P

SUD50N04-09HVishay SiliconixN-Channel 40-V (D-S), 175 C MOSFETFEATURES TrenchFET Power MOSFETSPRODUCT SUMMARY 175 C Junction TemperatureV(BR)DSS (V) rDS(on) ()ID (A)c Qg (Typ) RoHS High Threshold Voltage At High TemperatureCOMPLIANT 0.009 at VGS = 10 V 40 50 55TO-252DGDrain Connected to TabG D STop ViewSOrdering Information: SUD50N04-

 5.5. Size:1428K  cn vbsemi
 sud50n04-8m8p.pdf

SUD50N04-37P SUD50N04-37P

SUD50N04-8M8Pwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIM

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXTP08N120P | 2N6793LCC4

 

 
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