SUD50N04-37P - аналоги, параметры транзистора

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..1. Size:173K vishay
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New Product SUD50N04-37P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested RoHS 0.037 at VGS = 10 V 8 40 5.3 nC COMPLIANT 0.046 at VGS = 4.5 V 8 APPLICATIONS Backlight Inverter for LCD Display Full Bridge DC/DC Converter TO-252 D G Drain Connected t

5.1. Size:146K vishay
sud50n04-16p.pdf pdf_icon

SUD50N04-16P Vishay Siliconix N-Channel 40-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.016 at VGS = 10 V 20 COMPLIANT 40 15.6 nC 0.018 at VGS = 4.5 V 20 APPLICATIONS LCD TV Inverter Secondary Synchronous Rectification TO-252 D G Drain Connected to

5.2. Size:177K vishay
sud50n04-8m8p.pdf pdf_icon

SUD50N04-8m8P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0088 at VGS = 10 V 50 TrenchFET Power MOSFET 40 16 nC 0.0105 at VGS = 4.5 V 50 100 % UIS Tested 100 % Rg Tested PWM Optimized Compliant to RoHS Directive 2002/95/EC A

5.3. Size:69K vishay
sud50n04-05l.pdf pdf_icon

New Product SUD50N04-05L Vishay Siliconix N-Channel 40-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( ) ID (A)c 175 C Junction Temperature 0.0054 at VGS = 10 V RoHS 115 40 COMPLIANT 0.0069 at VGS = 4.5 V 102 D TO-252 G Drain Connected to Tab G D S Top View S Ordering Information SUD50N04-05L-E3 (Lead (Pb)