SUM110P08-11 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

New ProductSUM110P08-11Vishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)b Qg (Typ)RoHS0.0111 at VGS = - 10 V - 110 113 nC- 80COMPLIANTTO-263SGDrain Connected to TabG D STop ViewDOrdering Information: SUM110P08-11 (Lead (Pb)-free) P-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C

New ProductSUM110P08-11LVishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)b Qg (Typ)RoHS0.0112 at VGS = - 10 V - 110COMPLIANT- 80 85 nC0.0145 at VGS = - 4.5 V - 109TO-263SGDrain Connected to TabG D STop ViewDOrdering Information: SUM110P08-11L-E3 (Lead (Pb)-free) P-Channel MOSFETA

SUM110P08-11LVishay SiliconixP-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)b Qg (Typ) Material categorization:For definitions of compliance please see0.0112 at VGS = - 10 V - 110- 80 85 nCwww.vishay.com/doc?999120.0145 at VGS = - 4.5 V - 109TO-263SGDrain Connected to TabG D STop ViewDOrder

SUM110P04-04LVishay SiliconixP-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)dAvailable New Package with Low Thermal Resistance0.0042 at VGS = - 10 V - 110RoHS*- 400.0062 at VGS = - 4.5 V - 110COMPLIANTSTO-263GG D STop ViewOrdering Information: SUM110P04-04LSUM110P04-04L (Lead (Pb

SUM110P06-08LVishay SiliconixP-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)dAvailable Package with Low Thermal Resistance0.008 at VGS = - 10 V RoHS*- 60 - 110 100 % Rg Tested0.0105 at VGS = - 4.5 V COMPLIANTSTO-263GG D STop ViewDOrdering Information: SUM110P06-08LSUM110P06-08L-E

SUM110P06-07Lwww.vishay.comVishay SiliconixP-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) d Package with low thermal resistance0.0069 at VGS = -10 V -60 -110 Material categorization: 0.0088 at VGS = -4.5 V for definitions of compliance please see www.vishay.com/doc?99912 STO-263GSSP-C

SUM110P04-05Vishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ.)RoHS0.005 at VGS = - 10 V - 110 185 nC- 40COMPLIANTTO-263SGDrain Connected to TabG D STop ViewDOrdering Information: SUM110P04-05-E3 (Lead (Pb)-free) P-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless o