All MOSFET. SUM110P08-11 Datasheet

 

SUM110P08-11 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUM110P08-11
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 185 nC
   trⓘ - Rise Time: 410 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0111 Ohm
   Package: TO-263

 SUM110P08-11 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUM110P08-11 Datasheet (PDF)

 ..1. Size:79K  vishay
 sum110p08-11.pdf

SUM110P08-11 SUM110P08-11

New ProductSUM110P08-11Vishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)b Qg (Typ)RoHS0.0111 at VGS = - 10 V - 110 113 nC- 80COMPLIANTTO-263SGDrain Connected to TabG D STop ViewDOrdering Information: SUM110P08-11 (Lead (Pb)-free) P-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C

 0.1. Size:111K  vishay
 sum110p08-11l sum110p08.pdf

SUM110P08-11 SUM110P08-11

New ProductSUM110P08-11LVishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)b Qg (Typ)RoHS0.0112 at VGS = - 10 V - 110COMPLIANT- 80 85 nC0.0145 at VGS = - 4.5 V - 109TO-263SGDrain Connected to TabG D STop ViewDOrdering Information: SUM110P08-11L-E3 (Lead (Pb)-free) P-Channel MOSFETA

 0.2. Size:134K  vishay
 sum110p08-11l.pdf

SUM110P08-11 SUM110P08-11

SUM110P08-11LVishay SiliconixP-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)b Qg (Typ) Material categorization:For definitions of compliance please see0.0112 at VGS = - 10 V - 110- 80 85 nCwww.vishay.com/doc?999120.0145 at VGS = - 4.5 V - 109TO-263SGDrain Connected to TabG D STop ViewDOrder

 6.1. Size:76K  vishay
 sum110p04-04l.pdf

SUM110P08-11 SUM110P08-11

SUM110P04-04LVishay SiliconixP-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)dAvailable New Package with Low Thermal Resistance0.0042 at VGS = - 10 V - 110RoHS*- 400.0062 at VGS = - 4.5 V - 110COMPLIANTSTO-263GG D STop ViewOrdering Information: SUM110P04-04LSUM110P04-04L (Lead (Pb

 6.2. Size:93K  vishay
 sum110p06-08l.pdf

SUM110P08-11 SUM110P08-11

SUM110P06-08LVishay SiliconixP-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)dAvailable Package with Low Thermal Resistance0.008 at VGS = - 10 V RoHS*- 60 - 110 100 % Rg Tested0.0105 at VGS = - 4.5 V COMPLIANTSTO-263GG D STop ViewDOrdering Information: SUM110P06-08LSUM110P06-08L-E

 6.3. Size:173K  vishay
 sum110p06-07l.pdf

SUM110P08-11 SUM110P08-11

SUM110P06-07Lwww.vishay.comVishay SiliconixP-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) d Package with low thermal resistance0.0069 at VGS = -10 V -60 -110 Material categorization: 0.0088 at VGS = -4.5 V for definitions of compliance please see www.vishay.com/doc?99912 STO-263GSSP-C

 6.4. Size:166K  vishay
 sum110p04-05.pdf

SUM110P08-11 SUM110P08-11

SUM110P04-05Vishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ.)RoHS0.005 at VGS = - 10 V - 110 185 nC- 40COMPLIANTTO-263SGDrain Connected to TabG D STop ViewDOrdering Information: SUM110P04-05-E3 (Lead (Pb)-free) P-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless o

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AOD9N52 | IXFR4N100Q

 

 
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