SUM110P08-11 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SUM110P08-11
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 375 W
Предельно допустимое напряжение сток-исток |Uds|: 80 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 110 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 185 nC
Время нарастания (tr): 410 ns
Выходная емкость (Cd): 790 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0111 Ohm
Тип корпуса: TO-263
Аналог (замена) для SUM110P08-11
SUM110P08-11 Datasheet (PDF)
sum110p08-11.pdf
New ProductSUM110P08-11Vishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)b Qg (Typ)RoHS0.0111 at VGS = - 10 V - 110 113 nC- 80COMPLIANTTO-263SGDrain Connected to TabG D STop ViewDOrdering Information: SUM110P08-11 (Lead (Pb)-free) P-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C
sum110p08-11l sum110p08.pdf
New ProductSUM110P08-11LVishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)b Qg (Typ)RoHS0.0112 at VGS = - 10 V - 110COMPLIANT- 80 85 nC0.0145 at VGS = - 4.5 V - 109TO-263SGDrain Connected to TabG D STop ViewDOrdering Information: SUM110P08-11L-E3 (Lead (Pb)-free) P-Channel MOSFETA
sum110p08-11l.pdf
SUM110P08-11LVishay SiliconixP-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)b Qg (Typ) Material categorization:For definitions of compliance please see0.0112 at VGS = - 10 V - 110- 80 85 nCwww.vishay.com/doc?999120.0145 at VGS = - 4.5 V - 109TO-263SGDrain Connected to TabG D STop ViewDOrder
sum110p04-04l.pdf
SUM110P04-04LVishay SiliconixP-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)dAvailable New Package with Low Thermal Resistance0.0042 at VGS = - 10 V - 110RoHS*- 400.0062 at VGS = - 4.5 V - 110COMPLIANTSTO-263GG D STop ViewOrdering Information: SUM110P04-04LSUM110P04-04L (Lead (Pb
sum110p06-08l.pdf
SUM110P06-08LVishay SiliconixP-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)dAvailable Package with Low Thermal Resistance0.008 at VGS = - 10 V RoHS*- 60 - 110 100 % Rg Tested0.0105 at VGS = - 4.5 V COMPLIANTSTO-263GG D STop ViewDOrdering Information: SUM110P06-08LSUM110P06-08L-E
sum110p06-07l.pdf
SUM110P06-07Lwww.vishay.comVishay SiliconixP-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) d Package with low thermal resistance0.0069 at VGS = -10 V -60 -110 Material categorization: 0.0088 at VGS = -4.5 V for definitions of compliance please see www.vishay.com/doc?99912 STO-263GSSP-C
sum110p04-05.pdf
SUM110P04-05Vishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ.)RoHS0.005 at VGS = - 10 V - 110 185 nC- 40COMPLIANTTO-263SGDrain Connected to TabG D STop ViewDOrdering Information: SUM110P04-05-E3 (Lead (Pb)-free) P-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless o
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