SUM40N10-30 Todos los transistores

 

SUM40N10-30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SUM40N10-30
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 107 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 40 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 35 nC
   Tiempo de subida (tr): 12 nS
   Conductancia de drenaje-sustrato (Cd): 270 pF
   Resistencia entre drenaje y fuente RDS(on): 0.03 Ohm
   Paquete / Cubierta: TO-263

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SUM40N10-30 Datasheet (PDF)

 ..1. Size:164K  vishay
sum40n10-30.pdf

SUM40N10-30 SUM40N10-30

SUM40N10-30Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.034 at VGS = 6 V37.5COMPLIANTDTO-263GG D STop ViewSOrdering Information: SUM40N10-30SUM40N10-

 7.1. Size:163K  vishay
sum40n15-38.pdf

SUM40N10-30 SUM40N10-30

SUM40N15-38Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.038 at VGS = 10 V40150 New Low Thermal Resistance Package0.042 at VGS = 6 V38 PWM Optimized Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO

 8.1. Size:66K  vishay
sum40n02-12p.pdf

SUM40N10-30 SUM40N10-30

SUM40N02-12PVishay SiliconixN-Channel 20-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175_C Junction TemperatureV(BR)DSS (V) rDS(on) (W) ID (A)a Qg (Typ)D Optimized for High-Side Synchronous Rectifier0.012 @ VGS = 10 V 40aD 100% Rg Tested20 7520 7.50.026 @ VGS = 4.5 V 40aAPPLICATIONSD Desktop or Server CPU CoreD Game StationDTO-263D

 8.2. Size:100K  vishay
sum40n05-19l.pdf

SUM40N10-30 SUM40N10-30

SUM40N05-19LVishay SiliconixN-Channel 55-V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.019 at VGS = 10 V 40RoHS*550.025 at VGS = 4.5 V 35COMPLIANTDTO-263 GDRAIN connected to TAB G D S Top View SOrdering Information: SUM40N05-19L-E3 (Lead

 8.3. Size:67K  vishay
sum40n03.pdf

SUM40N10-30 SUM40N10-30

SUM40N03-30LNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETV(BR)DSS (V) rDS(on) (W) ID (A) Qg (Typ)D 175_C Junction Temperature0.030 @ VGS = 10 V 40D 100% Rg Tested30 1830 180.045 @ VGS = 4.5 V 33DTO-263DRAIN connected to TABGG D STop ViewSOrdering Information: SUM40N03-30LE3N-Channel MOS

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