SUM40N10-30 Todos los transistores

 ..1. Size:164K  vishay
 sum40n10-30.pdf

SUM40N10-30 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.034 at VGS = 6 V 37.5 COMPLIANT D TO-263 G G D S Top View S Ordering Information SUM40N10-30 SUM40N10-

 7.1. Size:163K  vishay
 sum40n15-38.pdf

SUM40N15-38 Vishay Siliconix N-Channel 150-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.038 at VGS = 10 V 40 150 New Low Thermal Resistance Package 0.042 at VGS = 6 V 38 PWM Optimized Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO

 8.1. Size:66K  vishay
 sum40n02-12p.pdf

SUM40N02-12P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175_C Junction Temperature V(BR)DSS (V) rDS(on) (W) ID (A)a Qg (Typ) D Optimized for High-Side Synchronous Rectifier 0.012 @ VGS = 10 V 40a D 100% Rg Tested 20 75 20 7.5 0.026 @ VGS = 4.5 V 40a APPLICATIONS D Desktop or Server CPU Core D Game Station D TO-263 D

 8.2. Size:100K  vishay
 sum40n05-19l.pdf

SUM40N05-19L Vishay Siliconix N-Channel 55-V (D-S), 175 C MOSFET, Logic Level FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.019 at VGS = 10 V 40 RoHS* 55 0.025 at VGS = 4.5 V 35 COMPLIANT D TO-263 G DRAIN connected to TAB G D S Top View S Ordering Information SUM40N05-19L-E3 (Lead

 8.3. Size:67K  vishay
 sum40n03.pdf

SUM40N03-30L New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET V(BR)DSS (V) rDS(on) (W) ID (A) Qg (Typ) D 175_C Junction Temperature 0.030 @ VGS = 10 V 40 D 100% Rg Tested 30 18 30 18 0.045 @ VGS = 4.5 V 33 D TO-263 DRAIN connected to TAB G G D S Top View S Ordering Information SUM40N03-30L E3 N-Channel MOS