SUM40N10-30 - параметры транзистора MOSFET, его аналоги, datasheet

SUM40N10-30 Datasheet (PDF)

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SUM40N10-30Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.034 at VGS = 6 V37.5COMPLIANTDTO-263GG D STop ViewSOrdering Information: SUM40N10-30SUM40N10-

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sum40n15-38.pdf pdf_icon

SUM40N15-38Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.038 at VGS = 10 V40150 New Low Thermal Resistance Package0.042 at VGS = 6 V38 PWM Optimized Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO

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SUM40N02-12PVishay SiliconixN-Channel 20-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175_C Junction TemperatureV(BR)DSS (V) rDS(on) (W) ID (A)a Qg (Typ)D Optimized for High-Side Synchronous Rectifier0.012 @ VGS = 10 V 40aD 100% Rg Tested20 7520 7.50.026 @ VGS = 4.5 V 40aAPPLICATIONSD Desktop or Server CPU CoreD Game StationDTO-263D

8.2. Size:100K vishay
sum40n05-19l.pdf pdf_icon

SUM40N05-19LVishay SiliconixN-Channel 55-V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.019 at VGS = 10 V 40RoHS*550.025 at VGS = 4.5 V 35COMPLIANTDTO-263 GDRAIN connected to TAB G D S Top View SOrdering Information: SUM40N05-19L-E3 (Lead