All MOSFET. SUM40N10-30 Datasheet

 

SUM40N10-30 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUM40N10-30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-263

 SUM40N10-30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUM40N10-30 Datasheet (PDF)

 ..1. Size:164K  vishay
sum40n10-30.pdf

SUM40N10-30 SUM40N10-30

SUM40N10-30Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.034 at VGS = 6 V37.5COMPLIANTDTO-263GG D STop ViewSOrdering Information: SUM40N10-30SUM40N10-

 7.1. Size:163K  vishay
sum40n15-38.pdf

SUM40N10-30 SUM40N10-30

SUM40N15-38Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.038 at VGS = 10 V40150 New Low Thermal Resistance Package0.042 at VGS = 6 V38 PWM Optimized Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO

 8.1. Size:66K  vishay
sum40n02-12p.pdf

SUM40N10-30 SUM40N10-30

SUM40N02-12PVishay SiliconixN-Channel 20-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175_C Junction TemperatureV(BR)DSS (V) rDS(on) (W) ID (A)a Qg (Typ)D Optimized for High-Side Synchronous Rectifier0.012 @ VGS = 10 V 40aD 100% Rg Tested20 7520 7.50.026 @ VGS = 4.5 V 40aAPPLICATIONSD Desktop or Server CPU CoreD Game StationDTO-263D

 8.2. Size:100K  vishay
sum40n05-19l.pdf

SUM40N10-30 SUM40N10-30

SUM40N05-19LVishay SiliconixN-Channel 55-V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.019 at VGS = 10 V 40RoHS*550.025 at VGS = 4.5 V 35COMPLIANTDTO-263 GDRAIN connected to TAB G D S Top View SOrdering Information: SUM40N05-19L-E3 (Lead

 8.3. Size:67K  vishay
sum40n03.pdf

SUM40N10-30 SUM40N10-30

SUM40N03-30LNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETV(BR)DSS (V) rDS(on) (W) ID (A) Qg (Typ)D 175_C Junction Temperature0.030 @ VGS = 10 V 40D 100% Rg Tested30 1830 180.045 @ VGS = 4.5 V 33DTO-263DRAIN connected to TABGG D STop ViewSOrdering Information: SUM40N03-30LE3N-Channel MOS

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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