SUM60N02-3M9P Todos los transistores

 

SUM60N02-3M9P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SUM60N02-3M9P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 985 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
   Paquete / Cubierta: TO-263
 

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SUM60N02-3M9P Datasheet (PDF)

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SUM60N02-3M9P

SUM60N02-3m9PVishay SiliconixN-Channel 20-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)a 175 C Junction TemperatureRoHS0.0039 at VGS = 10 V60COMPLIANT 100 % Rg Tested200.0052 at VGS = 4.5 V60 100 % UIS TestedAPPLICATIONS OR-ingDTO-263 GDRAIN connected to TAB G D S To

 6.1. Size:167K  vishay
sum60n02.pdf pdf_icon

SUM60N02-3M9P

SUM60N02-3m9PVishay SiliconixN-Channel 20-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)a 175 C Junction TemperatureRoHS0.0039 at VGS = 10 V60COMPLIANT 100 % Rg Tested200.0052 at VGS = 4.5 V60 100 % UIS TestedAPPLICATIONS OR-ingDTO-263 GDRAIN connected to TAB G D S To

 7.1. Size:136K  vishay
sum60n04-05lt.pdf pdf_icon

SUM60N02-3M9P

SUM60N04-05LTVishay SiliconixN-Channel 40-V (D-S) MOSFET with Sensing DiodeFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS PlusV(BR)DSS (V) rDS(on) ()ID (A)AvailableTemperature Sensing Diode0.0045 at VGS = 10 V60a 175 C Junction Temperature RoHS*400.0065 at VGS = 4.5 VCOMPLIANT20a Low Thermal Resistance PackageAPPLICATIONSD2PAK-5L Ind

 7.2. Size:103K  vishay
sum60n04-05t.pdf pdf_icon

SUM60N02-3M9P

SUM60N04-05TVishay SiliconixN-Channel 40-V (D-S) MOSFET with Sensing DiodeFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS Plus V(BR)DSS (V) rDS(on) ()ID (A)AvailableTemperature Sensing Diode0.0054 at VGS = 10 V4060aRoHS* 175 C Junction TemperatureCOMPLIANT Low Thermal Resistance Package2 D PAK-5 DT11 2 3 4 5 D1 D2GT2G D S T 1

Otros transistores... SUM40N10-30 , SUM40N15-38 , SUM45N25-58 , SUM47N10-24L , SUM50N06-16L , SUM50P10-42 , SUM52N20-39P , SUM55P06-19L , 5N65 , SUM60N10-17 , SUM65N20-30 , SUM70N03-09CP , SUM70N04-07L , SUM75N06-09L , SUM75N15-18P , SUM85N03-06P , SUM85N15-19 .

History: HGP068N15S | ELM17408GA

 

 
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