Справочник MOSFET. SUM60N02-3M9P

 

SUM60N02-3M9P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SUM60N02-3M9P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 985 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для SUM60N02-3M9P

 

 

SUM60N02-3M9P Datasheet (PDF)

 ..1. Size:166K  vishay
 sum60n02-3m9p.pdf

SUM60N02-3M9P SUM60N02-3M9P

SUM60N02-3m9PVishay SiliconixN-Channel 20-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)a 175 C Junction TemperatureRoHS0.0039 at VGS = 10 V60COMPLIANT 100 % Rg Tested200.0052 at VGS = 4.5 V60 100 % UIS TestedAPPLICATIONS OR-ingDTO-263 GDRAIN connected to TAB G D S To

 6.1. Size:167K  vishay
 sum60n02.pdf

SUM60N02-3M9P SUM60N02-3M9P

SUM60N02-3m9PVishay SiliconixN-Channel 20-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)a 175 C Junction TemperatureRoHS0.0039 at VGS = 10 V60COMPLIANT 100 % Rg Tested200.0052 at VGS = 4.5 V60 100 % UIS TestedAPPLICATIONS OR-ingDTO-263 GDRAIN connected to TAB G D S To

 7.1. Size:136K  vishay
 sum60n04-05lt.pdf

SUM60N02-3M9P SUM60N02-3M9P

SUM60N04-05LTVishay SiliconixN-Channel 40-V (D-S) MOSFET with Sensing DiodeFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS PlusV(BR)DSS (V) rDS(on) ()ID (A)AvailableTemperature Sensing Diode0.0045 at VGS = 10 V60a 175 C Junction Temperature RoHS*400.0065 at VGS = 4.5 VCOMPLIANT20a Low Thermal Resistance PackageAPPLICATIONSD2PAK-5L Ind

 7.2. Size:103K  vishay
 sum60n04-05t.pdf

SUM60N02-3M9P SUM60N02-3M9P

SUM60N04-05TVishay SiliconixN-Channel 40-V (D-S) MOSFET with Sensing DiodeFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS Plus V(BR)DSS (V) rDS(on) ()ID (A)AvailableTemperature Sensing Diode0.0054 at VGS = 10 V4060aRoHS* 175 C Junction TemperatureCOMPLIANT Low Thermal Resistance Package2 D PAK-5 DT11 2 3 4 5 D1 D2GT2G D S T 1

 7.3. Size:167K  vishay
 sum60n04-12lt.pdf

SUM60N02-3M9P SUM60N02-3M9P

SUM60N04-12LTVishay SiliconixTemperature Sensing MOSFET, N-Channel 40-V (D-S)FEATURESPRODUCT SUMMARY Temperature-Sense Diodes for Thermal ShutdownV(BR)DSS (V) rDS(on) ()ID (A)Available TrenchFET Power MOSFET0.009 at VGS = 10 V 60a40 RoHS* 175 C Maximum Junction Temperature0.012 at VGS = 4.5 V 60COMPLIANT ESD Protected: 2000 VNotes:

 7.4. Size:98K  vishay
 sum60n04-06t.pdf

SUM60N02-3M9P SUM60N02-3M9P

SUM60N04-06TVishay SiliconixN-Channel 40-V (D-S) MOSFET with Sensing DiodeFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS PlusV(BR)DSS (V) rDS(on) ()ID (A)AvailableTemperature Sensing Diode0.0055 at VGS = 10 V4060aRoHS* 175 C Junction TemperatureCOMPLIANT New Low Thermal Resistance PackageAPPLICATIONSD2PAK-5L IndustrialDT11 2 3 4

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top