SUM60N02-3M9P MOSFET Datasheet: N-Ch, 20V, 60A. Full specification with pinout and replacement list

SUM60N02-3M9P Specs and Replacement

Type Designator: SUM60N02-3M9P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 985 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: TO-263

SUM60N02-3M9P substitution

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SUM60N02-3M9P datasheet

..1. Size:166K vishay
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SUM60N02-3m9P Vishay Siliconix N-Channel 20-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A)a 175 C Junction Temperature RoHS 0.0039 at VGS = 10 V 60 COMPLIANT 100 % Rg Tested 20 0.0052 at VGS = 4.5 V 60 100 % UIS Tested APPLICATIONS OR-ing D TO-263 G DRAIN connected to TAB G D S To... See More ⇒

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SUM60N04-05LT Vishay Siliconix N-Channel 40-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS Plus V(BR)DSS (V) rDS(on) ( )ID (A) Available Temperature Sensing Diode 0.0045 at VGS = 10 V 60a 175 C Junction Temperature RoHS* 40 0.0065 at VGS = 4.5 V COMPLIANT 20a Low Thermal Resistance Package APPLICATIONS D2PAK-5L Ind... See More ⇒

7.2. Size:103K vishay
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SUM60N04-05T Vishay Siliconix N-Channel 40-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS Plus V(BR)DSS (V) rDS(on) ( )ID (A) Available Temperature Sensing Diode 0.0054 at VGS = 10 V 40 60a RoHS* 175 C Junction Temperature COMPLIANT Low Thermal Resistance Package 2 D PAK-5 D T1 1 2 3 4 5 D1 D2 G T2 G D S T 1 ... See More ⇒