SUP60N02-4M5P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SUP60N02-4M5P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 985 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET SUP60N02-4M5P
SUP60N02-4M5P Datasheet (PDF)
sup60n02-4m5p.pdf
SUP60N02-4m5PVishay SiliconixN-Channel 20-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)a 175 C Junction TemperatureRoHS0.0045 at VGS = 10 V60 100 % Rg Tested COMPLIANT 200.0065 at VGS = 4.5 V60 100 % UIS TestedAPPLICATIONS OR-ingTO-220ABDDRAIN connected to TABGG D STop
sup60n02.pdf
SUP60N02-4m5PVishay SiliconixN-Channel 20-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)a 175 C Junction TemperatureRoHS0.0045 at VGS = 10 V60 100 % Rg Tested COMPLIANT 200.0065 at VGS = 4.5 V60 100 % UIS TestedAPPLICATIONS OR-ingTO-220ABDDRAIN connected to TABGG D STop
sup60n06.pdf
SUP60N06-12PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition60 0.012 at VGS = 10 V60d 33 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Synchronous Rectifier
sup60n06-12p.pdf
SUP60N06-12PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition60 0.012 at VGS = 10 V60d 33 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Synchronous Rectifier
sup60n06-18 sub60n06-18.pdf
SUP/SUB60N06-18Vishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)60 0.018 60TO-220ABDTO-263DRAIN connected to TAB GG D SG D STop ViewTop ViewSSUB60N06-18SUP60N06-18N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 60VVGate-Sourc
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918