SUP60N02-4M5P PDF and Equivalents Search

 

SUP60N02-4M5P Specs and Replacement

Type Designator: SUP60N02-4M5P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 985 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO-220AB

SUP60N02-4M5P substitution

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SUP60N02-4M5P datasheet

 ..1. Size:173K  vishay
 sup60n02-4m5p.pdf pdf_icon

SUP60N02-4M5P

SUP60N02-4m5P Vishay Siliconix N-Channel 20-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A)a 175 C Junction Temperature RoHS 0.0045 at VGS = 10 V 60 100 % Rg Tested COMPLIANT 20 0.0065 at VGS = 4.5 V 60 100 % UIS Tested APPLICATIONS OR-ing TO-220AB D DRAIN connected to TAB G G D S Top ... See More ⇒

 6.1. Size:171K  vishay
 sup60n02.pdf pdf_icon

SUP60N02-4M5P

SUP60N02-4m5P Vishay Siliconix N-Channel 20-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A)a 175 C Junction Temperature RoHS 0.0045 at VGS = 10 V 60 100 % Rg Tested COMPLIANT 20 0.0065 at VGS = 4.5 V 60 100 % UIS Tested APPLICATIONS OR-ing TO-220AB D DRAIN connected to TAB G G D S Top ... See More ⇒

 7.1. Size:162K  vishay
 sup60n06.pdf pdf_icon

SUP60N02-4M5P

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 7.2. Size:164K  vishay
 sup60n06-12p.pdf pdf_icon

SUP60N02-4M5P

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Detailed specifications: SUP40N10-30, SUP40N25-60, SUP40P10-43, SUP45N03-13L, SUP50N03-5M1P, SUP50N10-21P, SUP53P06-20, SUP57N20-33, MMIS60R580P, SUP60N06-12P, SUP60N10-16L, SUP60N10-18P, SUP65P04-15, SUP70N03-09BP, SUP75N03-04, SUP75P03-07, SUP75P05-08

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