SUP85N15-21 Todos los transistores

 ..1. Size:74K  vishay
 sup85n15-21.pdf

SUP85N15-21 Vishay Siliconix N-Channel 150-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.021 at VGS = 10 V 150 85 RoHS* COMPLIANT APPLICATIONS Primary Side Switch TO-220AB D DRAIN connected to TAB G G D S Top View S Ordering Information SUP85N15-21 SUP

 ..2. Size:74K  vishay
 sup85n15-21 sup85n15.pdf

SUP85N15-21 Vishay Siliconix N-Channel 150-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.021 at VGS = 10 V 150 85 RoHS* COMPLIANT APPLICATIONS Primary Side Switch TO-220AB D DRAIN connected to TAB G G D S Top View S Ordering Information SUP85N15-21 SUP

 7.1. Size:168K  vishay
 sup85n10-10p.pdf

SUP85N10-10P Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.010 at VGS = 10 V 100 85d 77 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Industrial D G G D S Top View

 7.2. Size:95K  vishay
 sup85n10-10 sup85n10-10 sub85n10-10.pdf

SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC 100 85a 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB

 7.3. Size:126K  vishay
 sup85n10-10 sub85n10-10.pdf

SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC 100 85a 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB

 7.4. Size:100K  vishay
 sup85n10-10 sub85n10-10 2.pdf

SUP/SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A) Available 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V RoHS* 100 85a COMPLIANT 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB85N10-10 N-Channel MOSFET