All MOSFET. SUP85N15-21 Datasheet

 

SUP85N15-21 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUP85N15-21
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 300 W
   Maximum Drain-Source Voltage |Vds|: 150 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 85 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 76 nC
   Rise Time (tr): 170 nS
   Drain-Source Capacitance (Cd): 530 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.021 Ohm
   Package: TO-220AB

 SUP85N15-21 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUP85N15-21 Datasheet (PDF)

 ..1. Size:74K  vishay
sup85n15-21.pdf

SUP85N15-21 SUP85N15-21

SUP85N15-21Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.021 at VGS = 10 V 150 85RoHS*COMPLIANTAPPLICATIONS Primary Side SwitchTO-220AB DDRAIN connected to TAB GG D S Top View SOrdering Information: SUP85N15-21SUP

 ..2. Size:74K  vishay
sup85n15-21 sup85n15.pdf

SUP85N15-21 SUP85N15-21

SUP85N15-21Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.021 at VGS = 10 V 150 85RoHS*COMPLIANTAPPLICATIONS Primary Side SwitchTO-220AB DDRAIN connected to TAB GG D S Top View SOrdering Information: SUP85N15-21SUP

 7.1. Size:168K  vishay
sup85n10-10p.pdf

SUP85N15-21 SUP85N15-21

SUP85N10-10PVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.010 at VGS = 10 V10085d 77 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECTO-220AB APPLICATIONS IndustrialD G G D S Top View

 7.2. Size:95K  vishay
sup85n10-10 sup85n10-10 sub85n10-10.pdf

SUP85N15-21 SUP85N15-21

SUP85N10-10, SUB85N10-10Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC10085a0.012 at VGS = 4.5 V TO-220ABD TO-263G DRAIN connected to TAB G D S Top ViewS G D S SUB

 7.3. Size:126K  vishay
sup85n10-10 sub85n10-10.pdf

SUP85N15-21 SUP85N15-21

SUP85N10-10, SUB85N10-10Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC10085a0.012 at VGS = 4.5 V TO-220ABD TO-263G DRAIN connected to TAB G D S Top ViewS G D S SUB

 7.4. Size:100K  vishay
sup85n10-10 sub85n10-10 2.pdf

SUP85N15-21 SUP85N15-21

SUP/SUB85N10-10Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Maximum Junction Temperature0.0105 at VGS = 10 V RoHS*10085a COMPLIANT0.012 at VGS = 4.5 V TO-220ABDTO-263GDRAIN connected to TABG D STop ViewSG D SSUB85N10-10N-Channel MOSFET

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF540N , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
Back to Top