IXTH30N50 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH30N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 360 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 635 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm

Encapsulados: TO247

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IXTH30N50 datasheet

 ..1. Size:40K  ixys
 ixth30n45 ixth30n50.pdf pdf_icon

IXTH30N50

Preliminary Data Sheet VDSS ID25 RDS(on) MegaMOSTMFET IXTH 30N45 450 V 30 A 0.16 N-Channel Enhancement Mode IXTH 30N50 500 V 30 A 0.17 TO-247 AD Symbol Test Conditions Maximum Ratings D (TAB) 30N45 450 V VDSS TJ = 25 C to 150 C 30N50 500 V 30N45 450 V VDGR TJ = 25 C to 150 C; RGS = 1 M 30N50 500 V TO-247 SMD ( ...S ) VGS Continuous 20 V VGSM Transient 30 V ID

 0.1. Size:142K  ixys
 ixth30n50l2-ixtq30n50l2-ixtt30n50l2.pdf pdf_icon

IXTH30N50

IXTH30N50L2 VDSS = 500V Linear L2TM Power IXTQ30N50L2 ID25 = 30A MOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOA D D D D O D O N-Channel Enhancement Mode TO-247 (IXTH) RGi w w G O O (TAB) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RGS = 1M 500 V VGSS Continu

 0.2. Size:336K  ixys
 ixth30n50p ixtq30n50p ixtt30n50p ixtv30n50p.pdf pdf_icon

IXTH30N50

VDSS = 500 V IXTH 30N50P PolarHVTM ID25 = 30 A IXTQ 30N50P Power MOSFET RDS(on) 200 m IXTT 30N50P N-Channel Enhancement Mode IXTV 30N50P Avalanche Rated IXTV 30N50PS TO-247 AD (IXTH) (TAB) Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuo

 0.3. Size:211K  inchange semiconductor
 ixth30n50l.pdf pdf_icon

IXTH30N50

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTH30N50L FEATURES With TO-247 packaging With low gate drive requirements Low switching loss Low on-state resistance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

MOSTRAR MÁS

Otros transistores... IXTH24N50, IXTH24N50MA, IXTH24N50MB, IXTH27N35MA, IXTH27N35MB, IXTH27N40MA, IXTH27N40MB, IXTH30N45, AO3400, IXTH31N15MA, IXTH31N15MB, IXTH31N20MA, IXTH31N20MB, IXTH33N45, IXTH35N25MA, IXTH35N25MB, IXTH35N30