IXTH30N50 Datasheet and Replacement

Preliminary Data SheetVDSS ID25 RDS(on)MegaMOSTMFETIXTH 30N45 450 V 30 A 0.16 N-Channel Enhancement ModeIXTH 30N50 500 V 30 A 0.17 TO-247 ADSymbol Test Conditions Maximum RatingsD (TAB)30N45 450 VVDSS TJ = 25C to 150C 30N50 500 V30N45 450 VVDGR TJ = 25C to 150C; RGS = 1 M 30N50 500 VTO-247 SMD( ...S )VGS Continuous 20 VVGSM Transient 30 VID

IXTH30N50L2 VDSS = 500VLinear L2TM PowerIXTQ30N50L2 ID25 = 30AMOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOADDDDO DON-Channel Enhancement ModeTO-247 (IXTH)RGiwwG OO(TAB)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continu

VDSS = 500 VIXTH 30N50PPolarHVTMID25 = 30 AIXTQ 30N50PPower MOSFET RDS(on) 200 m IXTT 30N50PN-Channel Enhancement ModeIXTV 30N50PAvalanche RatedIXTV 30N50PSTO-247 AD (IXTH)(TAB)Symbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuo

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXTH30N50LFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)