MMDF1N05ER2G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMDF1N05ER2G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MMDF1N05ER2G MOSFET
MMDF1N05ER2G datasheet
mmdf1n05er2g.pdf
MMDF1N05E Power MOSFET 1 Amp, 50 Volts N Channel SO 8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain to source diode has a low reverse recovery time. MiniMOSt 1 AMPERE devices are designed for use in low vo
mmdf1n05e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF1N05E/D Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola s TMOS process. These miniature surface DUAL TMOS MOSFET mount MOSFETs feature ultra low RDS(on) and true logic level 50 VOLTS performan
mmdf1n05e-d.pdf
MMDF1N05E Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) http //onsemi.com and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the 1 AMPERE, 50 VOLTS drain-to-source diode has a low reverse recovery time. MiniMOSt RDS(on) = 300 mW devices are design
mmdf1n05.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF1N05E/D Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola s TMOS process. These miniature surface DUAL TMOS MOSFET mount MOSFETs feature ultra low RDS(on) and true logic level 50 VOLTS performan
Otros transistores... MMD60R580PRH , MMD60R750PRH , MMD60R900PRH , MMD70R1K4PRH , MMD70R600PRH , MMD70R750PRH , MMD70R900PRH , MMD80R900PRH , 8N60 , MMDF3N02HDR2 , MMDF3N02HDR2G , MME60R290PRH , MME70R380PRH , MMF50R280PTH , MMF60R115PTH , MMF60R190PTH , MMF60R290PTH .
History: AGM035N10A | P4402FAG | IRHQ57110 | CTP06N6P8 | JMTG021N04A | NVB5860N
History: AGM035N10A | P4402FAG | IRHQ57110 | CTP06N6P8 | JMTG021N04A | NVB5860N
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