MMDF1N05ER2G Todos los transistores

 

MMDF1N05ER2G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMDF1N05ER2G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: SO-8
 

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MMDF1N05ER2G datasheet

 ..1. Size:72K  onsemi
mmdf1n05er2g.pdf pdf_icon

MMDF1N05ER2G

MMDF1N05E Power MOSFET 1 Amp, 50 Volts N Channel SO 8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain to source diode has a low reverse recovery time. MiniMOSt 1 AMPERE devices are designed for use in low vo

 5.1. Size:147K  motorola
mmdf1n05e.pdf pdf_icon

MMDF1N05ER2G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF1N05E/D Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola s TMOS process. These miniature surface DUAL TMOS MOSFET mount MOSFETs feature ultra low RDS(on) and true logic level 50 VOLTS performan

 5.2. Size:75K  onsemi
mmdf1n05e-d.pdf pdf_icon

MMDF1N05ER2G

MMDF1N05E Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) http //onsemi.com and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the 1 AMPERE, 50 VOLTS drain-to-source diode has a low reverse recovery time. MiniMOSt RDS(on) = 300 mW devices are design

 6.1. Size:169K  motorola
mmdf1n05.pdf pdf_icon

MMDF1N05ER2G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF1N05E/D Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola s TMOS process. These miniature surface DUAL TMOS MOSFET mount MOSFETs feature ultra low RDS(on) and true logic level 50 VOLTS performan

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History: AGM035N10A | P4402FAG | IRHQ57110 | CTP06N6P8 | JMTG021N04A | NVB5860N

 

 
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