Справочник MOSFET. MMDF1N05ER2G

 

MMDF1N05ER2G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MMDF1N05ER2G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
   Тип корпуса: SO-8
     - подбор MOSFET транзистора по параметрам

 

MMDF1N05ER2G Datasheet (PDF)

 ..1. Size:72K  onsemi
 mmdf1n05er2g.pdf pdf_icon

MMDF1N05ER2G

MMDF1N05EPower MOSFET1 Amp, 50 VoltsNChannel SO8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedraintosource diode has a low reverse recovery time. MiniMOSt1 AMPEREdevices are designed for use in low vo

 5.1. Size:147K  motorola
 mmdf1n05e.pdf pdf_icon

MMDF1N05ER2G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF1N05E/DMedium Power Surface Mount ProductsMMDF1N05ETMOS Dual N-ChannelField Effect TransistorsMiniMOS devices are an advanced series of power MOSFETswhich utilize Motorolas TMOS process. These miniature surfaceDUAL TMOS MOSFETmount MOSFETs feature ultra low RDS(on) and true logic level50 VOLTSperforman

 5.2. Size:75K  onsemi
 mmdf1n05e-d.pdf pdf_icon

MMDF1N05ER2G

MMDF1N05EPower MOSFET1 Amp, 50 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)http://onsemi.comand true logic level performance. They are capable of withstandinghigh energy in the avalanche and commutation modes and the1 AMPERE, 50 VOLTSdrain-to-source diode has a low reverse recovery time. MiniMOStRDS(on) = 300 mWdevices are design

 6.1. Size:169K  motorola
 mmdf1n05.pdf pdf_icon

MMDF1N05ER2G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF1N05E/DMedium Power Surface Mount ProductsMMDF1N05ETMOS Dual N-ChannelField Effect TransistorsMiniMOS devices are an advanced series of power MOSFETswhich utilize Motorolas TMOS process. These miniature surfaceDUAL TMOS MOSFETmount MOSFETs feature ultra low RDS(on) and true logic level50 VOLTSperforman

ПОКАЗАТЬ ЕЩЁ

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History: APM4012NU | RFD10P03L | FS10KM-12 | PKE02BB | 2SK1758 | AOI482 | IXFP18N65X2

 

 
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