MMDF1N05ER2G. Аналоги и основные параметры

Наименование производителя: MMDF1N05ER2G

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 50 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 30 ns

Cossⓘ - Выходная емкость: 160 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm

Тип корпуса: SO-8

Аналог (замена) для MMDF1N05ER2G

- подборⓘ MOSFET транзистора по параметрам

 

MMDF1N05ER2G даташит

 ..1. Size:72K  onsemi
 mmdf1n05er2g.pdf pdf_icon

MMDF1N05ER2G

MMDF1N05E Power MOSFET 1 Amp, 50 Volts N Channel SO 8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain to source diode has a low reverse recovery time. MiniMOSt 1 AMPERE devices are designed for use in low vo

 5.1. Size:147K  motorola
 mmdf1n05e.pdf pdf_icon

MMDF1N05ER2G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF1N05E/D Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola s TMOS process. These miniature surface DUAL TMOS MOSFET mount MOSFETs feature ultra low RDS(on) and true logic level 50 VOLTS performan

 5.2. Size:75K  onsemi
 mmdf1n05e-d.pdf pdf_icon

MMDF1N05ER2G

MMDF1N05E Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) http //onsemi.com and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the 1 AMPERE, 50 VOLTS drain-to-source diode has a low reverse recovery time. MiniMOSt RDS(on) = 300 mW devices are design

 6.1. Size:169K  motorola
 mmdf1n05.pdf pdf_icon

MMDF1N05ER2G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF1N05E/D Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola s TMOS process. These miniature surface DUAL TMOS MOSFET mount MOSFETs feature ultra low RDS(on) and true logic level 50 VOLTS performan

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