MMDF1N05ER2G Specs and Replacement

Type Designator: MMDF1N05ER2G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SO-8

MMDF1N05ER2G substitution

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MMDF1N05ER2G datasheet

 ..1. Size:72K  onsemi
 mmdf1n05er2g.pdf pdf_icon

MMDF1N05ER2G

MMDF1N05E Power MOSFET 1 Amp, 50 Volts N Channel SO 8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain to source diode has a low reverse recovery time. MiniMOSt 1 AMPERE devices are designed for use in low vo... See More ⇒

 5.1. Size:147K  motorola
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MMDF1N05ER2G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF1N05E/D Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola s TMOS process. These miniature surface DUAL TMOS MOSFET mount MOSFETs feature ultra low RDS(on) and true logic level 50 VOLTS performan... See More ⇒

 5.2. Size:75K  onsemi
 mmdf1n05e-d.pdf pdf_icon

MMDF1N05ER2G

MMDF1N05E Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) http //onsemi.com and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the 1 AMPERE, 50 VOLTS drain-to-source diode has a low reverse recovery time. MiniMOSt RDS(on) = 300 mW devices are design... See More ⇒

 6.1. Size:169K  motorola
 mmdf1n05.pdf pdf_icon

MMDF1N05ER2G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF1N05E/D Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola s TMOS process. These miniature surface DUAL TMOS MOSFET mount MOSFETs feature ultra low RDS(on) and true logic level 50 VOLTS performan... See More ⇒

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Detailed specifications: MMD60R580PRH, MMD60R750PRH, MMD60R900PRH, MMD70R1K4PRH, MMD70R600PRH, MMD70R750PRH, MMD70R900PRH, MMD80R900PRH, 8N60, MMDF3N02HDR2, MMDF3N02HDR2G, MME60R290PRH, MME70R380PRH, MMF50R280PTH, MMF60R115PTH, MMF60R190PTH, MMF60R290PTH

Keywords - MMDF1N05ER2G MOSFET specs

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 MMDF1N05ER2G replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.