MME60R290PRH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MME60R290PRH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 750 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm

Encapsulados: TO-263

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MME60R290PRH datasheet

 ..1. Size:1534K  magnachip
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MME60R290PRH

MME60R290P Datasheet MME60R290P 600V 0.29 N-channel MOSFET Description MME60R290P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 ..2. Size:289K  inchange semiconductor
 mme60r290prh.pdf pdf_icon

MME60R290PRH

isc N-Channel MOSFET Transistor MME60R290PRH FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 5.1. Size:1458K  magnachip
 mme60r290qrh.pdf pdf_icon

MME60R290PRH

MME60R290Q Datasheet MME60R290Q 600V 0.29 N-channel MOSFET Description MME60R290Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 5.2. Size:290K  inchange semiconductor
 mme60r290qrh.pdf pdf_icon

MME60R290PRH

isc N-Channel MOSFET Transistor MME60R290QRH FEATURES Drain Current I = 13.8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

MOSTRAR MÁS

Otros transistores... MMD70R1K4PRH, MMD70R600PRH, MMD70R750PRH, MMD70R900PRH, MMD80R900PRH, MMDF1N05ER2G, MMDF3N02HDR2, MMDF3N02HDR2G, AO3400A, MME70R380PRH, MMF50R280PTH, MMF60R115PTH, MMF60R190PTH, MMF60R290PTH, MMF60R360PTH, MMF60R580PTH, MMF60R750PTH