All MOSFET. MME60R290PRH Datasheet

 

MME60R290PRH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MME60R290PRH
   Marking Code: 60R290P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO-263

 MME60R290PRH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MME60R290PRH Datasheet (PDF)

 ..1. Size:1534K  magnachip
 mme60r290prh.pdf

MME60R290PRH MME60R290PRH

MME60R290P Datasheet MME60R290P 600V 0.29 N-channel MOSFET Description MME60R290P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 ..2. Size:289K  inchange semiconductor
 mme60r290prh.pdf

MME60R290PRH MME60R290PRH

isc N-Channel MOSFET Transistor MME60R290PRHFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 5.1. Size:1458K  magnachip
 mme60r290qrh.pdf

MME60R290PRH MME60R290PRH

MME60R290Q Datasheet MME60R290Q 600V 0.29 N-channel MOSFET Description MME60R290Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 5.2. Size:290K  inchange semiconductor
 mme60r290qrh.pdf

MME60R290PRH MME60R290PRH

isc N-Channel MOSFET Transistor MME60R290QRHFEATURESDrain Current : I = 13.8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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