MME60R290PRH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MME60R290PRH
Маркировка: 60R290P
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 104 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 13 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 32 nC
Время нарастания (tr): 45 ns
Выходная емкость (Cd): 750 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.29 Ohm
Тип корпуса: TO-263
Аналог (замена) для MME60R290PRH
MME60R290PRH Datasheet (PDF)
mme60r290prh.pdf
MME60R290P Datasheet MME60R290P 600V 0.29 N-channel MOSFET Description MME60R290P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mme60r290prh.pdf
isc N-Channel MOSFET Transistor MME60R290PRHFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
mme60r290qrh.pdf
MME60R290Q Datasheet MME60R290Q 600V 0.29 N-channel MOSFET Description MME60R290Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mme60r290qrh.pdf
isc N-Channel MOSFET Transistor MME60R290QRHFEATURESDrain Current : I = 13.8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
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