MMF60R115PTH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMF60R115PTH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 33 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 105 nS
Cossⓘ - Capacitancia de salida: 1780 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de MMF60R115PTH MOSFET
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MMF60R115PTH datasheet
mmf60r115pth.pdf
MMF60R115P Datasheet MMF60R115P 600V 0.115 N-channel MOSFET Description MMF60R115P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmf60r115pth.pdf
isc N-Channel MOSFET Transistor MMF60R115PTH FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.115 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s
mmf60r190pth.pdf
MMF60R190P Datasheet MMF60R190P 600V 0.19 N-channel MOSFET Description MMF60R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmf60r190qth.pdf
MMF60R190Q Datasheet MMF60R190Q 600V 0.19 N-channel MOSFET Description MMF60R190Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
Otros transistores... MMD70R900PRH, MMD80R900PRH, MMDF1N05ER2G, MMDF3N02HDR2, MMDF3N02HDR2G, MME60R290PRH, MME70R380PRH, MMF50R280PTH, IRF1405, MMF60R190PTH, MMF60R290PTH, MMF60R360PTH, MMF60R580PTH, MMF60R750PTH, MMF65R190PTH, MMF70R600PTH, MMF70R900PTH
History: AM4953P | MMP4435BDY | RSR025N05 | DMP3018SFK | SM6008NSG | AM2334NE | 2SK875
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