MMF60R115PTH. Аналоги и основные параметры
Наименование производителя: MMF60R115PTH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 25.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 33 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 105 ns
Cossⓘ - Выходная емкость: 1780 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.115 Ohm
Тип корпуса: TO-220F
Аналог (замена) для MMF60R115PTH
- подборⓘ MOSFET транзистора по параметрам
MMF60R115PTH даташит
mmf60r115pth.pdf
MMF60R115P Datasheet MMF60R115P 600V 0.115 N-channel MOSFET Description MMF60R115P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmf60r115pth.pdf
isc N-Channel MOSFET Transistor MMF60R115PTH FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.115 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s
mmf60r190pth.pdf
MMF60R190P Datasheet MMF60R190P 600V 0.19 N-channel MOSFET Description MMF60R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmf60r190qth.pdf
MMF60R190Q Datasheet MMF60R190Q 600V 0.19 N-channel MOSFET Description MMF60R190Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
Другие IGBT... MMD70R900PRH, MMD80R900PRH, MMDF1N05ER2G, MMDF3N02HDR2, MMDF3N02HDR2G, MME60R290PRH, MME70R380PRH, MMF50R280PTH, IRF1405, MMF60R190PTH, MMF60R290PTH, MMF60R360PTH, MMF60R580PTH, MMF60R750PTH, MMF65R190PTH, MMF70R600PTH, MMF70R900PTH
History: SM6008NSG
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