MMF60R115PTH PDF and Equivalents Search

 ..1. Size:1287K  magnachip
 mmf60r115pth.pdf

MMF60R115P Datasheet MMF60R115P 600V 0.115 N-channel MOSFET Description MMF60R115P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as ... See More ⇒

 ..2. Size:279K  inchange semiconductor
 mmf60r115pth.pdf

isc N-Channel MOSFET Transistor MMF60R115PTH FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.115 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒

 7.1. Size:1243K  magnachip
 mmf60r190pth.pdf

MMF60R190P Datasheet MMF60R190P 600V 0.19 N-channel MOSFET Description MMF60R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l... See More ⇒

 7.2. Size:1588K  magnachip
 mmf60r190qth.pdf

MMF60R190Q Datasheet MMF60R190Q 600V 0.19 N-channel MOSFET Description MMF60R190Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l... See More ⇒

 7.3. Size:279K  inchange semiconductor
 mmf60r190pth.pdf

isc N-Channel MOSFET Transistor MMF60R190PTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

 7.4. Size:279K  inchange semiconductor
 mmf60r190qth.pdf

isc N-Channel MOSFET Transistor MMF60R190QTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒