MMF60R580PTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMF60R580PTH
Código: 60R580P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 26 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 18 nC
Tiempo de subida (tr): 34 nS
Conductancia de drenaje-sustrato (Cd): 428 pF
Resistencia entre drenaje y fuente RDS(on): 0.58 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET MMF60R580PTH
MMF60R580PTH Datasheet (PDF)
mmf60r580pth.pdf
MMF60R580P Datasheet MMF60R580P 600V 0.58 N-channel MOSFET Description MMF60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmf60r580pth.pdf
isc N-Channel MOSFET Transistor MMF60R580PTHFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
mmf60r580p.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMF60R580PFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V
mmf60r580qth.pdf
MMF60R580Q Datasheet MMF60R580Q 600V 0.58 N-channel MOSFET Description MMF60R580Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmf60r580qth.pdf
isc N-Channel MOSFET Transistor MMF60R580QTHFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
