MMF60R580PTH. Аналоги и основные параметры

Наименование производителя: MMF60R580PTH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 26 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 34 ns

Cossⓘ - Выходная емкость: 428 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.58 Ohm

Тип корпуса: TO-220F

Аналог (замена) для MMF60R580PTH

- подборⓘ MOSFET транзистора по параметрам

 

MMF60R580PTH даташит

 ..1. Size:1156K  magnachip
 mmf60r580pth.pdf pdf_icon

MMF60R580PTH

MMF60R580P Datasheet MMF60R580P 600V 0.58 N-channel MOSFET Description MMF60R580P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 ..2. Size:279K  inchange semiconductor
 mmf60r580pth.pdf pdf_icon

MMF60R580PTH

isc N-Channel MOSFET Transistor MMF60R580PTH FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.58 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 4.1. Size:199K  inchange semiconductor
 mmf60r580p.pdf pdf_icon

MMF60R580PTH

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMF60R580P FEATURES Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor control DC DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

 5.1. Size:1563K  magnachip
 mmf60r580qth.pdf pdf_icon

MMF60R580PTH

MMF60R580Q Datasheet MMF60R580Q 600V 0.58 N-channel MOSFET Description MMF60R580Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

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