MMFT107T1 Todos los transistores

 ..1. Size:78K  onsemi
 mmft107t1.pdf

MMFT107T1 Preferred Device Power MOSFET 250 mA, 200 Volts N Channel SOT 223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc dc converters, http //onsemi.com solenoid and relay drivers. The device is housed in the SOT 223 package which is designed for medium power surface mount 250 mA applications. 200 VOLTS

 0.1. Size:118K  motorola
 mmft107t1rev3x.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT107T1/D MMFT107T1 Medium Power Field Effect Motorola Preferred Device Transistor N Channel Enhancement Mode Silicon Gate TMOS MEDIUM POWER TMOS FET SOT 223 for Surface Mount 250 mA, 200 VOLTS RDS(on) = 14 OHM MAX This TMOS medium power field effect transistor is designed for high speed, low loss power switchi

 8.1. Size:91K  motorola
 mmft108t1rev0.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT108T1/D Field Effect Transistor MMFT108T1 N Channel Enhancement Mode Logic Level SOT 223 TMOS FET 2, 4 DRAIN TRANSISTOR N CHANNEL ENHANCEMENT 1 GATE 4 3 SOURCE 1 2 3 CASE 318E 04, STYLE 3 SOT 223 (TO 261AA) MAXIMUM RATINGS Rating Symbol Value Unit Drain to Source Voltage VDSS 200

 9.1. Size:236K  motorola
 mmft1n10e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT1N10E/D Medium Power Field Effect Transistor MMFT1N10E N Channel Enhancement Mode Motorola Preferred Device Silicon Gate TMOS E FETt SOT 223 for Surface Mount MEDIUM POWER This advanced E FET is a TMOS Medium Power MOSFET TMOS FET designed to withstand high energy in the avalanche and commuta- 1 AMP tion mod