MMFT107T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMFT107T1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 14 Ohm
   Paquete / Cubierta: SOT-223

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MMFT107T1 Datasheet (PDF)

..1. Size:78K onsemi
mmft107t1.pdf

MMFT107T1Preferred DevicePower MOSFET250 mA, 200 VoltsNChannel SOT223This Power MOSFET is designed for high speed, low loss powerswitching applications such as switching regulators, dcdc converters,http://onsemi.comsolenoid and relay drivers. The device is housed in the SOT223package which is designed for medium power surface mount250 mAapplications.200 VOLTS

0.1. Size:118K motorola
mmft107t1rev3x.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT107T1/DMMFT107T1Medium Power Field EffectMotorola Preferred DeviceTransistorNChannel EnhancementModeSilicon Gate TMOSMEDIUM POWERTMOS FETSOT223 for Surface Mount250 mA, 200 VOLTSRDS(on) = 14 OHM MAXThis TMOS medium power field effect transistor is designed forhigh speed, low loss power switchi

8.1. Size:91K motorola
mmft108t1rev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT108T1/DField Effect TransistorMMFT108T1NChannel EnhancementModeLogic Level SOT223TMOS FET2, 4 DRAINTRANSISTORNCHANNEL ENHANCEMENT1GATE43 SOURCE123CASE 318E04, STYLE 3SOT223 (TO261AA)MAXIMUM RATINGSRating Symbol Value UnitDraintoSource Voltage VDSS 200

9.1. Size:236K motorola
mmft1n10e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT1N10E/DMedium Power Field Effect TransistorMMFT1N10ENChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS Medium Power MOSFETTMOS FETdesigned to withstand high energy in the avalanche and commuta-1 AMPtion mod

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