MMFT107T1 Specs and Replacement

Type Designator: MMFT107T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm

Package: SOT-223

MMFT107T1 substitution

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MMFT107T1 datasheet

 ..1. Size:78K  onsemi
mmft107t1.pdf pdf_icon

MMFT107T1

MMFT107T1 Preferred Device Power MOSFET 250 mA, 200 Volts N Channel SOT 223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc dc converters, http //onsemi.com solenoid and relay drivers. The device is housed in the SOT 223 package which is designed for medium power surface mount 250 mA applications. 200 VOLTS... See More ⇒

 0.1. Size:118K  motorola
mmft107t1rev3x.pdf pdf_icon

MMFT107T1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT107T1/D MMFT107T1 Medium Power Field Effect Motorola Preferred Device Transistor N Channel Enhancement Mode Silicon Gate TMOS MEDIUM POWER TMOS FET SOT 223 for Surface Mount 250 mA, 200 VOLTS RDS(on) = 14 OHM MAX This TMOS medium power field effect transistor is designed for high speed, low loss power switchi... See More ⇒

 8.1. Size:91K  motorola
mmft108t1rev0.pdf pdf_icon

MMFT107T1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT108T1/D Field Effect Transistor MMFT108T1 N Channel Enhancement Mode Logic Level SOT 223 TMOS FET 2, 4 DRAIN TRANSISTOR N CHANNEL ENHANCEMENT 1 GATE 4 3 SOURCE 1 2 3 CASE 318E 04, STYLE 3 SOT 223 (TO 261AA) MAXIMUM RATINGS Rating Symbol Value Unit Drain to Source Voltage VDSS 200 ... See More ⇒

 9.1. Size:236K  motorola
mmft1n10e.pdf pdf_icon

MMFT107T1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT1N10E/D Medium Power Field Effect Transistor MMFT1N10E N Channel Enhancement Mode Motorola Preferred Device Silicon Gate TMOS E FETt SOT 223 for Surface Mount MEDIUM POWER This advanced E FET is a TMOS Medium Power MOSFET TMOS FET designed to withstand high energy in the avalanche and commuta- 1 AMP tion mod... See More ⇒

Detailed specifications: MMF60R360PTH, MMF60R580PTH, MMF60R750PTH, MMF65R190PTH, MMF70R600PTH, MMF70R900PTH, MMF80R1K2PTH, MMF80R900PTH, RU7088R, MMFT2406T1, MMFT2955ET1, MMFT2N02ELT1, MMFT5P03HDT1, MMFT60R115PCTH, MMFT60R195PTH, MMFT60R290PCTH, MMFT60R290PTH

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.