All MOSFET. MMFT107T1 Datasheet

 

MMFT107T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MMFT107T1
   Marking Code: FT107
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 0.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: SOT-223

 MMFT107T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMFT107T1 Datasheet (PDF)

 ..1. Size:78K  onsemi
mmft107t1.pdf

MMFT107T1
MMFT107T1

MMFT107T1Preferred DevicePower MOSFET250 mA, 200 VoltsNChannel SOT223This Power MOSFET is designed for high speed, low loss powerswitching applications such as switching regulators, dcdc converters,http://onsemi.comsolenoid and relay drivers. The device is housed in the SOT223package which is designed for medium power surface mount250 mAapplications.200 VOLTS

 0.1. Size:118K  motorola
mmft107t1rev3x.pdf

MMFT107T1
MMFT107T1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT107T1/DMMFT107T1Medium Power Field EffectMotorola Preferred DeviceTransistorNChannel EnhancementModeSilicon Gate TMOSMEDIUM POWERTMOS FETSOT223 for Surface Mount250 mA, 200 VOLTSRDS(on) = 14 OHM MAXThis TMOS medium power field effect transistor is designed forhigh speed, low loss power switchi

 8.1. Size:91K  motorola
mmft108t1rev0.pdf

MMFT107T1
MMFT107T1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT108T1/DField Effect TransistorMMFT108T1NChannel EnhancementModeLogic Level SOT223TMOS FET2, 4 DRAINTRANSISTORNCHANNEL ENHANCEMENT1GATE43 SOURCE123CASE 318E04, STYLE 3SOT223 (TO261AA)MAXIMUM RATINGSRating Symbol Value UnitDraintoSource Voltage VDSS 200

 9.1. Size:236K  motorola
mmft1n10e.pdf

MMFT107T1
MMFT107T1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT1N10E/DMedium Power Field Effect TransistorMMFT1N10ENChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS Medium Power MOSFETTMOS FETdesigned to withstand high energy in the avalanche and commuta-1 AMPtion mod

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: PN4391

 

 
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