MMFT107T1 Datasheet and Replacement

MMFT107T1Preferred DevicePower MOSFET250 mA, 200 VoltsNChannel SOT223This Power MOSFET is designed for high speed, low loss powerswitching applications such as switching regulators, dcdc converters,http://onsemi.comsolenoid and relay drivers. The device is housed in the SOT223package which is designed for medium power surface mount250 mAapplications.200 VOLTS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT107T1/DMMFT107T1Medium Power Field EffectMotorola Preferred DeviceTransistorNChannel EnhancementModeSilicon Gate TMOSMEDIUM POWERTMOS FETSOT223 for Surface Mount250 mA, 200 VOLTSRDS(on) = 14 OHM MAXThis TMOS medium power field effect transistor is designed forhigh speed, low loss power switchi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT108T1/DField Effect TransistorMMFT108T1NChannel EnhancementModeLogic Level SOT223TMOS FET2, 4 DRAINTRANSISTORNCHANNEL ENHANCEMENT1GATE43 SOURCE123CASE 318E04, STYLE 3SOT223 (TO261AA)MAXIMUM RATINGSRating Symbol Value UnitDraintoSource Voltage VDSS 200

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT1N10E/DMedium Power Field Effect TransistorMMFT1N10ENChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS Medium Power MOSFETTMOS FETdesigned to withstand high energy in the avalanche and commuta-1 AMPtion mod