MMFT2955ET1 Todos los transistores

 ..1. Size:113K  onsemi
 mmft2955et1.pdf

MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P Channel SOT 223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device http //onsemi.com also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power 1 AMPERE supplies, convert

 5.1. Size:248K  motorola
 mmft2955e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2955E/D Medium Power Field Effect Transistor MMFT2955E P Channel Enhancement Mode Motorola Preferred Device Silicon Gate TMOS E FETt SOT 223 for Surface Mount TMOS MEDIUM POWER FET This advanced E FET is a TMOS medium power MOSFET 1.2 AMP designed to withstand high energy in the avalanche and commuta- 60 VOLT

 5.2. Size:178K  motorola
 mmft2955erev4.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2955E/D Medium Power Field Effect Transistor MMFT2955E P Channel Enhancement Mode Motorola Preferred Device Silicon Gate TMOS E FETt SOT 223 for Surface Mount TMOS MEDIUM POWER FET This advanced E FET is a TMOS medium power MOSFET 1.2 AMP designed to withstand high energy in the avalanche and commuta- 60 VOLT

 9.1. Size:250K  motorola
 mmft2n02el.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2N02EL/D Medium Power Field Effect Transistor MMFT2N02EL N Channel Enhancement Mode Motorola Preferred Device Silicon Gate TMOS E FETt SOT 223 for Surface Mount MEDIUM POWER This advanced E FET is a TMOS Medium Power MOSFET LOGIC LEVEL TMOS FET designed to withstand high energy in the avalanche and commuta- 1

 9.2. Size:90K  motorola
 mmft2406t1rev1dx.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2406T1/D MMFT2406T1 Medium Power Field Effect Motorola Preferred Device Transistor N Channel Enhancement Mode MEDIUM POWER Silicon Gate TMOS E FET TMOS FET SOT 223 for Surface Mount 700 mA 240 VOLTS This TMOS medium power field effect transistor is designed for RDS(on) = 6.0 OHM high speed, low loss power

 9.3. Size:139K  motorola
 mmft2n25erev0.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2N25E/D Product Preview MMFT2N25E TMOS E-FET High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET 2.0 AMPERES This advanced high voltage TMOS E FET is designed to 250 VOLTS withstand high energy in the avalanche mode and switch efficiently. RDS(on) = 3.5 W This new high energy device

 9.4. Size:143K  motorola
 mmft2n25e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2N25E/D Product Preview MMFT2N25E TMOS E-FET High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET 2.0 AMPERES This advanced high voltage TMOS E FET is designed to 250 VOLTS withstand high energy in the avalanche mode and switch efficiently. RDS(on) = 3.5 W This new high energy device

 9.5. Size:114K  onsemi
 mmft2n02elt1.pdf

MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N Channel SOT 223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with http //onsemi.com a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain to source diode with a fast 2 AMPERES re

 9.6. Size:125K  onsemi
 mmft2406t1.pdf

MMFT2406T1 Power MOSFET 700 mA, 240 V, N-Channel, SOT-223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT-223 http //onsemi.com package which is designed for medium power surface mount applications. 700 mA, 240 V Silicon Gate for Fast Switching S