MMFT2955ET1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMFT2955ET1
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 210 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: SOT-223

Búsqueda de reemplazo de MOSFET MMFT2955ET1

MMFT2955ET1 Datasheet (PDF)

..1. Size:113K onsemi
mmft2955et1.pdf

MMFT2955EPreferred DevicePower MOSFET1 Amp, 60 VoltsPChannel SOT223This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This new energy efficient devicehttp://onsemi.comalso offers a draintosource diode with a fast recovery time.Designed for low voltage, high speed switching applications in power1 AMPEREsupplies, convert

5.1. Size:248K motorola
mmft2955e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2955E/DMedium Power Field Effect TransistorMMFT2955EPChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountTMOS MEDIUM POWER FETThis advanced EFET is a TMOS medium power MOSFET1.2 AMPdesigned to withstand high energy in the avalanche and commuta-60 VOLT

5.2. Size:178K motorola
mmft2955erev4.pdf

9.1. Size:250K motorola
mmft2n02el.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N02EL/DMedium Power Field Effect TransistorMMFT2N02ELNChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS Medium Power MOSFETLOGIC LEVEL TMOS FETdesigned to withstand high energy in the avalanche and commuta-1

9.2. Size:90K motorola
mmft2406t1rev1dx.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2406T1/DMMFT2406T1Medium Power Field EffectMotorola Preferred DeviceTransistorNChannel Enhancement ModeMEDIUM POWERSilicon Gate TMOS EFETTMOS FETSOT223 for Surface Mount700 mA240 VOLTSThis TMOS medium power field effect transistor is designed forRDS(on) = 6.0 OHMhigh speed, low loss power

9.3. Size:139K motorola
mmft2n25erev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N25E/DProduct PreviewMMFT2N25ETMOS E-FETHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FET2.0 AMPERESThis advanced high voltage TMOS EFET is designed to250 VOLTSwithstand high energy in the avalanche mode and switch efficiently.RDS(on) = 3.5 WThis new high energy device

9.4. Size:143K motorola
mmft2n25e.pdf

9.5. Size:114K onsemi
mmft2n02elt1.pdf

MMFT2N02ELPreferred DevicePower MOSFET2 Amps, 20 VoltsNChannel SOT223This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This device is also designed withhttp://onsemi.coma low threshold voltage so it is fully enhanced with 5 Volts. This newenergy efficient device also offers a draintosource diode with a fast2 AMPERESre

9.6. Size:125K onsemi
mmft2406t1.pdf

MMFT2406T1Power MOSFET700 mA, 240 V, N-Channel, SOT-223This Power MOSFET is designed for high speed, low loss powerswitching applications such as switching regulators, converters,solenoid and relay drivers. The device is housed in the SOT-223http://onsemi.compackage which is designed for medium power surface mountapplications. 700 mA, 240 V Silicon Gate for Fast Switching S

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