MMFT2955EPreferred DevicePower MOSFET1 Amp, 60 VoltsPChannel SOT223This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This new energy efficient devicehttp://onsemi.comalso offers a draintosource diode with a fast recovery time.Designed for low voltage, high speed switching applications in power1 AMPEREsupplies, convert

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2955E/DMedium Power Field Effect TransistorMMFT2955EPChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountTMOS MEDIUM POWER FETThis advanced EFET is a TMOS medium power MOSFET1.2 AMPdesigned to withstand high energy in the avalanche and commuta-60 VOLT

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2955E/DMedium Power Field Effect TransistorMMFT2955EPChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountTMOS MEDIUM POWER FETThis advanced EFET is a TMOS medium power MOSFET1.2 AMPdesigned to withstand high energy in the avalanche and commuta-60 VOLT

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N02EL/DMedium Power Field Effect TransistorMMFT2N02ELNChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS Medium Power MOSFETLOGIC LEVEL TMOS FETdesigned to withstand high energy in the avalanche and commuta-1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2406T1/DMMFT2406T1Medium Power Field EffectMotorola Preferred DeviceTransistorNChannel Enhancement ModeMEDIUM POWERSilicon Gate TMOS EFETTMOS FETSOT223 for Surface Mount700 mA240 VOLTSThis TMOS medium power field effect transistor is designed forRDS(on) = 6.0 OHMhigh speed, low loss power

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N25E/DProduct PreviewMMFT2N25ETMOS E-FETHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FET2.0 AMPERESThis advanced high voltage TMOS EFET is designed to250 VOLTSwithstand high energy in the avalanche mode and switch efficiently.RDS(on) = 3.5 WThis new high energy device

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N25E/DProduct PreviewMMFT2N25ETMOS E-FETHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FET2.0 AMPERESThis advanced high voltage TMOS EFET is designed to250 VOLTSwithstand high energy in the avalanche mode and switch efficiently.RDS(on) = 3.5 WThis new high energy device

MMFT2N02ELPreferred DevicePower MOSFET2 Amps, 20 VoltsNChannel SOT223This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This device is also designed withhttp://onsemi.coma low threshold voltage so it is fully enhanced with 5 Volts. This newenergy efficient device also offers a draintosource diode with a fast2 AMPERESre

MMFT2406T1Power MOSFET700 mA, 240 V, N-Channel, SOT-223This Power MOSFET is designed for high speed, low loss powerswitching applications such as switching regulators, converters,solenoid and relay drivers. The device is housed in the SOT-223http://onsemi.compackage which is designed for medium power surface mountapplications. 700 mA, 240 V Silicon Gate for Fast Switching S