MMFT2955ET1 MOSFET. Datasheet pdf. Equivalent

   Type Designator: MMFT2955ET1
   Marking Code: 2955E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT-223

MMFT2955ET1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MMFT2955ET1 Datasheet (PDF)

..1. Size:113K onsemi
mmft2955et1.pdf

MMFT2955EPreferred DevicePower MOSFET1 Amp, 60 VoltsPChannel SOT223This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This new energy efficient devicehttp://onsemi.comalso offers a draintosource diode with a fast recovery time.Designed for low voltage, high speed switching applications in power1 AMPEREsupplies, convert

5.1. Size:248K motorola
mmft2955e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2955E/DMedium Power Field Effect TransistorMMFT2955EPChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountTMOS MEDIUM POWER FETThis advanced EFET is a TMOS medium power MOSFET1.2 AMPdesigned to withstand high energy in the avalanche and commuta-60 VOLT

5.2. Size:178K motorola
mmft2955erev4.pdf

9.1. Size:250K motorola
mmft2n02el.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N02EL/DMedium Power Field Effect TransistorMMFT2N02ELNChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS Medium Power MOSFETLOGIC LEVEL TMOS FETdesigned to withstand high energy in the avalanche and commuta-1

9.2. Size:90K motorola
mmft2406t1rev1dx.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2406T1/DMMFT2406T1Medium Power Field EffectMotorola Preferred DeviceTransistorNChannel Enhancement ModeMEDIUM POWERSilicon Gate TMOS EFETTMOS FETSOT223 for Surface Mount700 mA240 VOLTSThis TMOS medium power field effect transistor is designed forRDS(on) = 6.0 OHMhigh speed, low loss power

9.3. Size:139K motorola
mmft2n25erev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N25E/DProduct PreviewMMFT2N25ETMOS E-FETHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FET2.0 AMPERESThis advanced high voltage TMOS EFET is designed to250 VOLTSwithstand high energy in the avalanche mode and switch efficiently.RDS(on) = 3.5 WThis new high energy device

9.4. Size:143K motorola
mmft2n25e.pdf

9.5. Size:114K onsemi
mmft2n02elt1.pdf

MMFT2N02ELPreferred DevicePower MOSFET2 Amps, 20 VoltsNChannel SOT223This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This device is also designed withhttp://onsemi.coma low threshold voltage so it is fully enhanced with 5 Volts. This newenergy efficient device also offers a draintosource diode with a fast2 AMPERESre

9.6. Size:125K onsemi
mmft2406t1.pdf

MMFT2406T1Power MOSFET700 mA, 240 V, N-Channel, SOT-223This Power MOSFET is designed for high speed, low loss powerswitching applications such as switching regulators, converters,solenoid and relay drivers. The device is housed in the SOT-223http://onsemi.compackage which is designed for medium power surface mountapplications. 700 mA, 240 V Silicon Gate for Fast Switching S

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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All MOSFET. MMFT2955ET1 Datasheet

MMFT2955ET1 MOSFET. Datasheet pdf. Equivalent

MMFT2955ET1 Datasheet (PDF)

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