MMFT2N02ELT1 Todos los transistores

 

MMFT2N02ELT1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMFT2N02ELT1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 73 nS
   Cossⓘ - Capacitancia de salida: 430 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: SOT-223
 

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MMFT2N02ELT1 Datasheet (PDF)

 ..1. Size:114K  onsemi
 mmft2n02elt1.pdf pdf_icon

MMFT2N02ELT1

MMFT2N02ELPreferred DevicePower MOSFET2 Amps, 20 VoltsNChannel SOT223This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This device is also designed withhttp://onsemi.coma low threshold voltage so it is fully enhanced with 5 Volts. This newenergy efficient device also offers a draintosource diode with a fast2 AMPERESre

 4.1. Size:250K  motorola
 mmft2n02el.pdf pdf_icon

MMFT2N02ELT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N02EL/DMedium Power Field Effect TransistorMMFT2N02ELNChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS Medium Power MOSFETLOGIC LEVEL TMOS FETdesigned to withstand high energy in the avalanche and commuta-1

 8.1. Size:139K  motorola
 mmft2n25erev0.pdf pdf_icon

MMFT2N02ELT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N25E/DProduct PreviewMMFT2N25ETMOS E-FETHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FET2.0 AMPERESThis advanced high voltage TMOS EFET is designed to250 VOLTSwithstand high energy in the avalanche mode and switch efficiently.RDS(on) = 3.5 WThis new high energy device

 8.2. Size:143K  motorola
 mmft2n25e.pdf pdf_icon

MMFT2N02ELT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N25E/DProduct PreviewMMFT2N25ETMOS E-FETHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FET2.0 AMPERESThis advanced high voltage TMOS EFET is designed to250 VOLTSwithstand high energy in the avalanche mode and switch efficiently.RDS(on) = 3.5 WThis new high energy device

MOSTRAR MÁS

Otros transistores... MMF65R190PTH , MMF70R600PTH , MMF70R900PTH , MMF80R1K2PTH , MMF80R900PTH , MMFT107T1 , MMFT2406T1 , MMFT2955ET1 , AO3407 , MMFT5P03HDT1 , MMFT60R115PCTH , MMFT60R195PTH , MMFT60R290PCTH , MMFT60R290PTH , MMFT60R380PCTH , MMFT60R380PTH , MMFT65R195PTH .

History: NCEP4090GU | 2SK4212-ZK | FKP253 | PTF8N65 | BRCS120N03DP | PZ5203QV | HTD2K1P10

 

 
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