MMFT2N02ELT1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMFT2N02ELT1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 1.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 73 nS

Cossⓘ - Capacitancia de salida: 430 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: SOT-223

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MMFT2N02ELT1 datasheet

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 mmft2n02elt1.pdf pdf_icon

MMFT2N02ELT1

MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N Channel SOT 223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with http //onsemi.com a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain to source diode with a fast 2 AMPERES re

 4.1. Size:250K  motorola
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MMFT2N02ELT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2N02EL/D Medium Power Field Effect Transistor MMFT2N02EL N Channel Enhancement Mode Motorola Preferred Device Silicon Gate TMOS E FETt SOT 223 for Surface Mount MEDIUM POWER This advanced E FET is a TMOS Medium Power MOSFET LOGIC LEVEL TMOS FET designed to withstand high energy in the avalanche and commuta- 1

 8.1. Size:139K  motorola
 mmft2n25erev0.pdf pdf_icon

MMFT2N02ELT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2N25E/D Product Preview MMFT2N25E TMOS E-FET High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET 2.0 AMPERES This advanced high voltage TMOS E FET is designed to 250 VOLTS withstand high energy in the avalanche mode and switch efficiently. RDS(on) = 3.5 W This new high energy device

 8.2. Size:143K  motorola
 mmft2n25e.pdf pdf_icon

MMFT2N02ELT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2N25E/D Product Preview MMFT2N25E TMOS E-FET High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET 2.0 AMPERES This advanced high voltage TMOS E FET is designed to 250 VOLTS withstand high energy in the avalanche mode and switch efficiently. RDS(on) = 3.5 W This new high energy device

MOSTRAR MÁS

Otros transistores... MMF65R190PTH, MMF70R600PTH, MMF70R900PTH, MMF80R1K2PTH, MMF80R900PTH, MMFT107T1, MMFT2406T1, MMFT2955ET1, AO4407A, MMFT5P03HDT1, MMFT60R115PCTH, MMFT60R195PTH, MMFT60R290PCTH, MMFT60R290PTH, MMFT60R380PCTH, MMFT60R380PTH, MMFT65R195PTH