MMFT2N02ELT1 Specs and Replacement

Type Designator: MMFT2N02ELT1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT-223

MMFT2N02ELT1 substitution

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MMFT2N02ELT1 datasheet

 ..1. Size:114K  onsemi
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MMFT2N02ELT1

MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N Channel SOT 223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with http //onsemi.com a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain to source diode with a fast 2 AMPERES re... See More ⇒

 4.1. Size:250K  motorola
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MMFT2N02ELT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2N02EL/D Medium Power Field Effect Transistor MMFT2N02EL N Channel Enhancement Mode Motorola Preferred Device Silicon Gate TMOS E FETt SOT 223 for Surface Mount MEDIUM POWER This advanced E FET is a TMOS Medium Power MOSFET LOGIC LEVEL TMOS FET designed to withstand high energy in the avalanche and commuta- 1... See More ⇒

 8.1. Size:139K  motorola
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MMFT2N02ELT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2N25E/D Product Preview MMFT2N25E TMOS E-FET High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET 2.0 AMPERES This advanced high voltage TMOS E FET is designed to 250 VOLTS withstand high energy in the avalanche mode and switch efficiently. RDS(on) = 3.5 W This new high energy device... See More ⇒

 8.2. Size:143K  motorola
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MMFT2N02ELT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT2N25E/D Product Preview MMFT2N25E TMOS E-FET High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET 2.0 AMPERES This advanced high voltage TMOS E FET is designed to 250 VOLTS withstand high energy in the avalanche mode and switch efficiently. RDS(on) = 3.5 W This new high energy device... See More ⇒

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Detailed specifications: MMF65R190PTH, MMF70R600PTH, MMF70R900PTH, MMF80R1K2PTH, MMF80R900PTH, MMFT107T1, MMFT2406T1, MMFT2955ET1, AO4407A, MMFT5P03HDT1, MMFT60R115PCTH, MMFT60R195PTH, MMFT60R290PCTH, MMFT60R290PTH, MMFT60R380PCTH, MMFT60R380PTH, MMFT65R195PTH

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.