All MOSFET. MMFT2N02ELT1 Datasheet

 

MMFT2N02ELT1 Datasheet and Replacement


   Type Designator: MMFT2N02ELT1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT-223
 

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MMFT2N02ELT1 Datasheet (PDF)

 ..1. Size:114K  onsemi
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MMFT2N02ELT1

MMFT2N02ELPreferred DevicePower MOSFET2 Amps, 20 VoltsNChannel SOT223This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This device is also designed withhttp://onsemi.coma low threshold voltage so it is fully enhanced with 5 Volts. This newenergy efficient device also offers a draintosource diode with a fast2 AMPERESre

 4.1. Size:250K  motorola
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MMFT2N02ELT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N02EL/DMedium Power Field Effect TransistorMMFT2N02ELNChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS Medium Power MOSFETLOGIC LEVEL TMOS FETdesigned to withstand high energy in the avalanche and commuta-1

 8.1. Size:139K  motorola
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MMFT2N02ELT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N25E/DProduct PreviewMMFT2N25ETMOS E-FETHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FET2.0 AMPERESThis advanced high voltage TMOS EFET is designed to250 VOLTSwithstand high energy in the avalanche mode and switch efficiently.RDS(on) = 3.5 WThis new high energy device

 8.2. Size:143K  motorola
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MMFT2N02ELT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N25E/DProduct PreviewMMFT2N25ETMOS E-FETHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FET2.0 AMPERESThis advanced high voltage TMOS EFET is designed to250 VOLTSwithstand high energy in the avalanche mode and switch efficiently.RDS(on) = 3.5 WThis new high energy device

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History: BUZ73AL | SSM3K329R | PMPB12UNEA | SL21N65CF | TK12A55D | MP4N150

Keywords - MMFT2N02ELT1 MOSFET datasheet

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