MMIX1F210N30P3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMIX1F210N30P3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 520 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 108 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 2550 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: ISOLATED TAB

 Búsqueda de reemplazo de MMIX1F210N30P3 MOSFET

- Selecciónⓘ de transistores por parámetros

 

MMIX1F210N30P3 datasheet

 ..1. Size:181K  ixys
 mmix1f210n30p3.pdf pdf_icon

MMIX1F210N30P3

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V MMIX1F210N30P3 Power MOSFET ID25 = 108A RDS(on) 16m (Electrically Isolated Tab) trr 250ns N-Channel Enhancement Mode D Avalanche Rated Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V Isolated Tab VDGR TJ

 7.1. Size:180K  ixys
 mmix1f230n20t.pdf pdf_icon

MMIX1F210N30P3

Advance Technical Information GigaMOSTM TrenchTM VDSS = 200V MMIX1F230N20T HiperFETTM ID25 = 168A Power MOSFET RDS(on) 8.3m trr 200ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 175 C 200 V

 8.1. Size:225K  ixys
 mmix1f420n10t.pdf pdf_icon

MMIX1F210N30P3

Advance Technical Information GigaMOSTM TrenchTM VDSS = 100V MMIX1F420N10T HiperFETTM ID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V Isolated Tab

 8.2. Size:233K  ixys
 mmix1f360n15t2.pdf pdf_icon

MMIX1F210N30P3

Preliminary Technical Information TrenchT2TM GigaMOSTM VDSS = 150V MMIX1F360N15T2 HiperFETTM ID25 = 235A Power MOSFET RDS(on) 4.4m trr 150ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 175 C

MOSTRAR MÁS

Otros transistores... MMIS60R750PTH, MMIS60R900PTH, MMIS70H900QTH, MMIS70R1K4PTH, MMIS70R900PTH, MMIX1F132N50P3, MMIX1F160N30T, MMIX1F180N25T, IRFP260N, MMIX1F230N20T, MMIX1F360N15T2, MMIX1F40N110P, MMIX1F420N10T, MMIX1F44N100Q3, MML60R190PTH, MML60R290PTH, MML65R190PTH