All MOSFET. MMIX1F210N30P3 Datasheet

 

MMIX1F210N30P3 MOSFET. Datasheet pdf. Equivalent

Type Designator: MMIX1F210N30P3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 520 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 108 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 268 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 2550 pF

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: Isolated, Tab

MMIX1F210N30P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMIX1F210N30P3 Datasheet (PDF)

1.1. mmix1f210n30p3.pdf Size:181K _update_mosfet

MMIX1F210N30P3
MMIX1F210N30P3

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V MMIX1F210N30P3 Power MOSFET ID25 = 108A ≤ Ω RDS(on) ≤ 16mΩ ≤ Ω ≤ Ω ≤ Ω (Electrically Isolated Tab) ≤ trr ≤ 250ns ≤ ≤ ≤ N-Channel Enhancement Mode D Avalanche Rated Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V Isolated Tab VDGR TJ

1.2. mmix1f210n30p3.pdf Size:181K _ixys

MMIX1F210N30P3
MMIX1F210N30P3

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V MMIX1F210N30P3 Power MOSFET ID25 = 108A ≤ Ω RDS(on) ≤ 16mΩ ≤ Ω ≤ Ω ≤ Ω (Electrically Isolated Tab) ≤ trr ≤ 250ns ≤ ≤ ≤ N-Channel Enhancement Mode D Avalanche Rated Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V Isolated Tab VDGR TJ

 3.1. mmix1f230n20t.pdf Size:180K _update_mosfet

MMIX1F210N30P3
MMIX1F210N30P3

Advance Technical Information GigaMOSTM TrenchTM VDSS = 200V MMIX1F230N20T HiperFETTM ID25 = 168A ≤ Ω Power MOSFET RDS(on) ≤ 8.3mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 200ns ≤ ≤ ≤ (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25°C to 175°C 200 V

3.2. mmix1f230n20t.pdf Size:180K _ixys

MMIX1F210N30P3
MMIX1F210N30P3

Advance Technical Information GigaMOSTM TrenchTM VDSS = 200V MMIX1F230N20T HiperFETTM ID25 = 168A ≤ Ω Power MOSFET RDS(on) ≤ 8.3mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 200ns ≤ ≤ ≤ (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25°C to 175°C 200 V

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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