MMIX1F210N30P3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MMIX1F210N30P3
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 520 W
Предельно допустимое напряжение сток-исток (Uds): 300 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Пороговое напряжение включения Ugs(th): 5 V
Максимально допустимый постоянный ток стока (Id): 108 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 268 nC
Время нарастания (tr): 25 ns
Выходная емкость (Cd): 2550 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.016 Ohm
Тип корпуса: Isolated, Tab
Аналог (замена) для MMIX1F210N30P3
MMIX1F210N30P3 Datasheet (PDF)
1.1. mmix1f210n30p3.pdf 
Size:181K _update_mosfet
Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V MMIX1F210N30P3 Power MOSFET ID25 = 108A ≤ Ω RDS(on) ≤ 16mΩ ≤ Ω ≤ Ω ≤ Ω (Electrically Isolated Tab) ≤ trr ≤ 250ns ≤ ≤ ≤ N-Channel Enhancement Mode D Avalanche Rated Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V Isolated Tab VDGR TJ
3.1. mmix1f230n20t.pdf Size:180K _update_mosfet
Advance Technical Information GigaMOSTM TrenchTM VDSS = 200V MMIX1F230N20T HiperFETTM ID25 = 168A ≤ Ω Power MOSFET RDS(on) ≤ 8.3mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 200ns ≤ ≤ ≤ (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25°C to 175°C 200 V
4.1. mmix1f180n25t.pdf Size:183K _update_mosfet
Advance Technical Information GigaMOSTM TrenchTM VDSS = 250V MMIX1F180N25T HiperFETTM ID25 = 130A ≤ Ω Power MOSFET RDS(on) ≤ 13mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 200ns ≤ ≤ ≤ (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25°C to 150°C 250 V V
4.2. mmix1f132n50p3.pdf Size:182K _update_mosfet
Advance Technical Information Polar3TM HiPerFETTM VDSS = 500V MMIX1F132N50P3 Power MOSFET ID25 = 63A ≤ Ω RDS(on) ≤ 43mΩ ≤ Ω ≤ Ω ≤ Ω ≤ (Electrically Isolated Tab) trr ≤ 250ns ≤ ≤ ≤ D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V Isolated Tab VDGR TJ =
4.3. mmix1f420n10t.pdf Size:225K _update_mosfet
Advance Technical Information GigaMOSTM TrenchTM VDSS = 100V MMIX1F420N10T HiperFETTM ID25 = 334A ≤ Ω Power MOSFET RDS(on) ≤ 2.6mΩ ≤ Ω ≤ Ω ≤ Ω ≤ Trr ≤ 140ns ≤ ≤ ≤ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V Isolated Tab
4.4. mmix1f44n100q3.pdf Size:176K _update_mosfet
Advance Technical Information HiperFETTM VDSS = 1000V MMIX1F44N100Q3 Power MOSFET ID25 = 30A ≤ Ω Q3-Class RDS(on) ≤ 245mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 300ns ≤ ≤ ≤ (Electrically Isolated Tab) D N-Channel Enhancement Mode Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V Isolated Tab VDGR TJ = 25°C to 150
4.5. mmix1f160n30t.pdf Size:183K _update_mosfet
Advance Technical Information GigaMOSTM TrenchTM VDSS = 300V MMIX1F160N30T HiperFETTM ID25 = 102A ≤ Ω Power MOSFET RDS(on) ≤ 20mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 200ns ≤ ≤ ≤ (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25°C to 150°C 300 V V
4.6. mmix1f40n110p.pdf Size:177K _update_mosfet
Advance Technical Information PolarTM HiperFETTM VDSS = 1100V MMIX1F40N110P Power MOSFET ID25 = 24A ≤ Ω RDS(on) ≤ 290mΩ ≤ Ω ≤ Ω ≤ Ω (Electrically Isolated Tab) ≤ trr ≤ 300ns ≤ ≤ ≤ D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V Isolated Tab VDGR TJ
4.7. mmix1f360n15t2.pdf Size:233K _update_mosfet
Preliminary Technical Information TrenchT2TM GigaMOSTM VDSS = 150V MMIX1F360N15T2 HiperFETTM ID25 = 235A ≤ Ω Power MOSFET RDS(on) ≤ 4.4mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 150ns ≤ ≤ ≤ (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25°C to 175°C
Другие MOSFET... SQ4936EY , SQ4937EY , SQ4940EY , SQ4942EY , SQ4946AEY , SQ4949EY , SQ4953EY , SQ4961EY , CEP83A3 , SQ7414AEN , SQ7414AENW , SQ7414EN , SQ7415AEN , SQ7415AENW , SQ7415EN , SQ9407EY , SQ9945BEY .
Список транзисторов
Обновления
MOSFET: IPP45N04S4L-08 | IPI45N04S4L-08 | IPP12CNE8NG | IPI12CNE8NG | IPD12CNE8NG | IPP08CNE8NG | IPI08CNE8NG | IPI06CN10NG | IPP054NE8NG | IPI05CNE8NG | IPP050N06NG | SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F |