MML60R190PTH Todos los transistores

 

MML60R190PTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MML60R190PTH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 154 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 73 nS
   Cossⓘ - Capacitancia de salida: 1250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO-262
 

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MML60R190PTH Datasheet (PDF)

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MML60R190PTH

MML60R190P Datasheet MML60R190P 600V 0.19 N-channel MOSFET Description MML60R190P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.1. Size:1537K  magnachip
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MML60R190PTH

MML60R290P Datasheet MML60R290P 600V 0.29 N-channel MOSFET Description MML60R290P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

Otros transistores... MMIX1F160N30T , MMIX1F180N25T , MMIX1F210N30P3 , MMIX1F230N20T , MMIX1F360N15T2 , MMIX1F40N110P , MMIX1F420N10T , MMIX1F44N100Q3 , IRFP250N , MML60R290PTH , MML65R190PTH , MMN2302 , MMN2312 , MMN25N03 , MMN3205 , MMN3220 , MMN3400 .

History: C3M0065100K | STP12NK80Z | VBE165R07

 

 
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