MML60R190PTH Specs and Replacement

Type Designator: MML60R190PTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 154 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 1250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO-262

MML60R190PTH substitution

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MML60R190PTH datasheet

 ..1. Size:1334K  magnachip
 mml60r190pth.pdf pdf_icon

MML60R190PTH

MML60R190P Datasheet MML60R190P 600V 0.19 N-channel MOSFET Description MML60R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l... See More ⇒

 8.1. Size:1537K  magnachip
 mml60r290pth.pdf pdf_icon

MML60R190PTH

MML60R290P Datasheet MML60R290P 600V 0.29 N-channel MOSFET Description MML60R290P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l... See More ⇒

Detailed specifications: MMIX1F160N30T, MMIX1F180N25T, MMIX1F210N30P3, MMIX1F230N20T, MMIX1F360N15T2, MMIX1F40N110P, MMIX1F420N10T, MMIX1F44N100Q3, IRFB4115, MML60R290PTH, MML65R190PTH, MMN2302, MMN2312, MMN25N03, MMN3205, MMN3220, MMN3400

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