MML60R190PTH MOSFET. Datasheet pdf. Equivalent
Type Designator: MML60R190PTH
Marking Code: 60R190P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 154 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 51 nC
trⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 1250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO-262
MML60R190PTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MML60R190PTH Datasheet (PDF)
mml60r190pth.pdf
MML60R190P Datasheet MML60R190P 600V 0.19 N-channel MOSFET Description MML60R190P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mml60r290pth.pdf
MML60R290P Datasheet MML60R290P 600V 0.29 N-channel MOSFET Description MML60R290P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SJMN250R80ZF | SI8100DB | SPI11N60CFD | SKI10297 | PE551BA | SIA906EDJ
History: SJMN250R80ZF | SI8100DB | SPI11N60CFD | SKI10297 | PE551BA | SIA906EDJ
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