MMN4364DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMN4364DY
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.6 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 16 V
Corriente continua de drenaje |Id|: 13 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Resistencia entre drenaje y fuente RDS(on): 0.0055 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MOSFET MMN4364DY
MMN4364DY Datasheet (PDF)
mmn4364dy.pdf
MMN4364DYPreliminary Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@20A = 5.5mRDS(ON), Vgs@4.5V, Ids@19A = 6.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSO-8 Internal Schematic DiagramDrain Gate
mmn4338.pdf
MMN4338Preliminary Package Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@4.9A = 42mRDS(ON), Vgs@4.5V, Ids@4.1A = 65mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMaximum
mmn4326.pdf
MMN4326Package Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@8.5A = 41mRDS(ON), Vgs@4.5V, Ids@8.5A = 45mRDS(ON), Vgs@2.5V, Ids@5.0A = 59mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View
mmn4336.pdf
MMN4336Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@25A = 3.6mRDS(ON), Vgs@4.5V, Ids@22A = 4.8mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSOP-08 Internal Schematic DiagramDrain Gate Source Top
mmn4307.pdf
MMN4307Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@14A = 7.8mRDS(ON), Vgs@4.5V, Ids@14A = 11.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFET
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
