All MOSFET. MMN4364DY Datasheet

 

MMN4364DY Datasheet and Replacement


   Type Designator: MMN4364DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SO-8
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MMN4364DY Datasheet (PDF)

 ..1. Size:185K  m-mos
 mmn4364dy.pdf pdf_icon

MMN4364DY

MMN4364DYPreliminary Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@20A = 5.5mRDS(ON), Vgs@4.5V, Ids@19A = 6.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSO-8 Internal Schematic DiagramDrain Gate

 9.1. Size:218K  m-mos
 mmn4338.pdf pdf_icon

MMN4364DY

MMN4338Preliminary Package Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@4.9A = 42mRDS(ON), Vgs@4.5V, Ids@4.1A = 65mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMaximum

 9.2. Size:292K  m-mos
 mmn4326.pdf pdf_icon

MMN4364DY

MMN4326Package Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@8.5A = 41mRDS(ON), Vgs@4.5V, Ids@8.5A = 45mRDS(ON), Vgs@2.5V, Ids@5.0A = 59mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View

 9.3. Size:201K  m-mos
 mmn4336.pdf pdf_icon

MMN4364DY

MMN4336Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@25A = 3.6mRDS(ON), Vgs@4.5V, Ids@22A = 4.8mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSOP-08 Internal Schematic DiagramDrain Gate Source Top

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History: LSF65R570GT | CSD16342Q5A

Keywords - MMN4364DY MOSFET datasheet

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