MMN4364DY - параметры транзистора MOSFET, его аналоги, datasheet

MMN4364DY Datasheet (PDF)

..1. Size:185K m-mos
mmn4364dy.pdf pdf_icon

MMN4364DYPreliminary Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@20A = 5.5mRDS(ON), Vgs@4.5V, Ids@19A = 6.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSO-8 Internal Schematic DiagramDrain Gate

9.1. Size:218K m-mos
mmn4338.pdf pdf_icon

MMN4338Preliminary Package Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@4.9A = 42mRDS(ON), Vgs@4.5V, Ids@4.1A = 65mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMaximum

9.2. Size:292K m-mos
mmn4326.pdf pdf_icon

MMN4326Package Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@8.5A = 41mRDS(ON), Vgs@4.5V, Ids@8.5A = 45mRDS(ON), Vgs@2.5V, Ids@5.0A = 59mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View

9.3. Size:201K m-mos
mmn4336.pdf pdf_icon

MMN4336Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@25A = 3.6mRDS(ON), Vgs@4.5V, Ids@22A = 4.8mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSOP-08 Internal Schematic DiagramDrain Gate Source Top