MMP4383 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMP4383

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.55 nS

Cossⓘ - Capacitancia de salida: 34.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm

Encapsulados: SOP-8

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MMP4383 datasheet

 ..1. Size:155K  m-mos
 mmp4383.pdf pdf_icon

MMP4383

MMP4383 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P- Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-3.9A = 85m RDS(ON), Vgs@-4.5V, Ids@-3.0A = 130m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characte

 9.1. Size:241K  m-mos
 mmp4357.pdf pdf_icon

MMP4383

MMP4357 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A =75m RDS(ON), Vgs@-4.5V, Ids@-4.2A =105m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteris

 9.2. Size:230K  m-mos
 mmp4353.pdf pdf_icon

MMP4383

MMP4353 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-4.5V, Ids@-4.0 = 75m RDS(ON), Vgs@-2.5V, Ids@-1.0A = 119m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S0-8 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characterist

 9.3. Size:150K  m-mos
 mmp4399.pdf pdf_icon

MMP4383

MMP4399 Preliminary Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P- Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-3.9A = 150m RDS(ON), Vgs@-4.5V, Ids@-3.0A = 200m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Top View P-Channel MOS

MOSTRAR MÁS

Otros transistores... MMP2301, MMP2311, MMP2323, MMP3401, MMP3415E, MMP3443, MMP4353, MMP4357, 2N60, MMP4399, MMP4407, MMP4411, MMP4411DY, MMP4415A, MMP4425, MMP4425DY, MMP4435BDY