MMP4383
MOSFET. Datasheet pdf. Equivalent
Type Designator: MMP4383
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 3.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.59
nC
trⓘ - Rise Time: 2.55
nS
Cossⓘ -
Output Capacitance: 34.8
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085
Ohm
Package:
SOP-8
MMP4383
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMP4383
Datasheet (PDF)
..1. Size:155K m-mos
mmp4383.pdf
MMP4383Package Data SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-3.9A = 85mRDS(ON), Vgs@-4.5V, Ids@-3.0A = 130mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characte
9.1. Size:241K m-mos
mmp4357.pdf
MMP4357Package Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-5.3A =75mRDS(ON), Vgs@-4.5V, Ids@-4.2A =105mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteris
9.2. Size:230K m-mos
mmp4353.pdf
MMP4353Package Data SheetM-MOS Semiconductor Hong Kong Limited30 P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-4.5V, Ids@-4.0 = 75mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 119mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceS0-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characterist
9.3. Size:150K m-mos
mmp4399.pdf
MMP4399Preliminary Package Data SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-3.9A = 150mRDS(ON), Vgs@-4.5V, Ids@-3.0A = 200mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramTop View P-Channel MOS
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