All MOSFET. MMP4383 Datasheet

 

MMP4383 Datasheet and Replacement


   Type Designator: MMP4383
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.55 nS
   Cossⓘ - Output Capacitance: 34.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOP-8
 

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MMP4383 Datasheet (PDF)

 ..1. Size:155K  m-mos
 mmp4383.pdf pdf_icon

MMP4383

MMP4383Package Data SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-3.9A = 85mRDS(ON), Vgs@-4.5V, Ids@-3.0A = 130mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characte

 9.1. Size:241K  m-mos
 mmp4357.pdf pdf_icon

MMP4383

MMP4357Package Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-5.3A =75mRDS(ON), Vgs@-4.5V, Ids@-4.2A =105mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteris

 9.2. Size:230K  m-mos
 mmp4353.pdf pdf_icon

MMP4383

MMP4353Package Data SheetM-MOS Semiconductor Hong Kong Limited30 P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-4.5V, Ids@-4.0 = 75mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 119mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceS0-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characterist

 9.3. Size:150K  m-mos
 mmp4399.pdf pdf_icon

MMP4383

MMP4399Preliminary Package Data SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-3.9A = 150mRDS(ON), Vgs@-4.5V, Ids@-3.0A = 200mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramTop View P-Channel MOS

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Datasheet: MMP2301 , MMP2311 , MMP2323 , MMP3401 , MMP3415E , MMP3443 , MMP4353 , MMP4357 , 7N60 , MMP4399 , MMP4407 , MMP4411 , MMP4411DY , MMP4415A , MMP4425 , MMP4425DY , MMP4435BDY .

History: DMN32D2LFB4 | APT40M90JN | RD12MVP1 | SPE7N65G | AP20N15AGP-HF | NCE2030K | HGE055NE4A

Keywords - MMP4383 MOSFET datasheet

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