MMP4425DY MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMP4425DY

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.96 nS

Cossⓘ - Capacitancia de salida: 491.9 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: SO-8

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MMP4425DY datasheet

 ..1. Size:154K  m-mos
 mmp4425dy.pdf pdf_icon

MMP4425DY

MMP4425DY Data Sheet M-MOS Semiconductor Hong Kong Limited 30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-11A = 14m RDS(ON), Vgs@-4.5V, Ids@-8.5A = 20m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S0-8 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA

 7.1. Size:154K  m-mos
 mmp4425.pdf pdf_icon

MMP4425DY

MMP4425 Data Sheet M-MOS Semiconductor Hong Kong Limited 38V P-Channel Enhancement-Mode MOSFET VDS= -38V RDS(ON), Vgs@-10V, Ids@-14A = 15m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SO-8 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter

 9.1. Size:205K  m-mos
 mmp4415a.pdf pdf_icon

MMP4425DY

MMP4415A Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P- Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-8A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25oC unl

 9.2. Size:154K  m-mos
 mmp4411.pdf pdf_icon

MMP4425DY

MMP4411 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-8A = 32m RDS(ON), Vgs@-4.5V, Ids@-5A = 55m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SO-8 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25

MOSTRAR MÁS

Otros transistores... MMP4357, MMP4383, MMP4399, MMP4407, MMP4411, MMP4411DY, MMP4415A, MMP4425, IRF1405, MMP4435BDY, MMP60R190PTH, MMP60R195PCTH, MMP60R290PCTH, MMP60R290PTH, MMP60R360PTH, MMP60R580PTH, MMP60R750PTH