MMP4425DY Todos los transistores

 

MMP4425DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMP4425DY
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.96 nS
   Cossⓘ - Capacitancia de salida: 491.9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: SO-8
 

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MMP4425DY Datasheet (PDF)

 ..1. Size:154K  m-mos
 mmp4425dy.pdf pdf_icon

MMP4425DY

MMP4425DYData SheetM-MOS Semiconductor Hong Kong Limited30 P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-11A = 14mRDS(ON), Vgs@-4.5V, Ids@-8.5A = 20mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceS0-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA

 7.1. Size:154K  m-mos
 mmp4425.pdf pdf_icon

MMP4425DY

MMP4425Data SheetM-MOS Semiconductor Hong Kong Limited38V P-Channel Enhancement-Mode MOSFETVDS= -38VRDS(ON), Vgs@-10V, Ids@-14A = 15mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)Parameter

 9.1. Size:205K  m-mos
 mmp4415a.pdf pdf_icon

MMP4425DY

MMP4415AData SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-8A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25oC unl

 9.2. Size:154K  m-mos
 mmp4411.pdf pdf_icon

MMP4425DY

MMP4411Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-8A = 32mRDS(ON), Vgs@-4.5V, Ids@-5A = 55mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25

MOSTRAR MÁS

Otros transistores... MMP4357 , MMP4383 , MMP4399 , MMP4407 , MMP4411 , MMP4411DY , MMP4415A , MMP4425 , NCEP15T14 , MMP4435BDY , MMP60R190PTH , MMP60R195PCTH , MMP60R290PCTH , MMP60R290PTH , MMP60R360PTH , MMP60R580PTH , MMP60R750PTH .

History: OSG55R074FZF | APT10045B2LLG

 

 
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