MMP4425DY MOSFET Datasheet: P-Ch, 30V, 11A. Full specification with pinout and replacement list

MMP4425DY Specs and Replacement

Type Designator: MMP4425DY

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.96 nS

Cossⓘ - Output Capacitance: 491.9 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SO-8

MMP4425DY substitution

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MMP4425DY datasheet

..1. Size:154K m-mos
mmp4425dy.pdf pdf_icon

MMP4425DY Data Sheet M-MOS Semiconductor Hong Kong Limited 30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-11A = 14m RDS(ON), Vgs@-4.5V, Ids@-8.5A = 20m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S0-8 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA ... See More ⇒

7.1. Size:154K m-mos
mmp4425.pdf pdf_icon

MMP4425 Data Sheet M-MOS Semiconductor Hong Kong Limited 38V P-Channel Enhancement-Mode MOSFET VDS= -38V RDS(ON), Vgs@-10V, Ids@-14A = 15m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SO-8 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter... See More ⇒

9.1. Size:205K m-mos
mmp4415a.pdf pdf_icon

MMP4415A Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P- Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-8A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25oC unl... See More ⇒

9.2. Size:154K m-mos
mmp4411.pdf pdf_icon

MMP4411 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-8A = 32m RDS(ON), Vgs@-4.5V, Ids@-5A = 55m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SO-8 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25... See More ⇒