MMSF3P02HDR2 Todos los transistores

 

MMSF3P02HDR2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMSF3P02HDR2
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 135 nS
   Cossⓘ - Capacitancia de salida: 740 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: SO-8
     - Selección de transistores por parámetros

 

MMSF3P02HDR2 Datasheet (PDF)

 ..1. Size:129K  onsemi
 mmsf3p02hdr2.pdf pdf_icon

MMSF3P02HDR2

MMSF3P02HDPower MOSFET3 Amps, 20 VoltsP-Channel SO-8These miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time. These3 AMPERES, 20 VOLTSdevices are designed for use in low v

 3.1. Size:302K  motorola
 mmsf3p02hdrev5.pdf pdf_icon

MMSF3P02HDR2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P02HD/DDesigner's Data SheetMMSF3P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V

 4.1. Size:259K  motorola
 mmsf3p02hd.pdf pdf_icon

MMSF3P02HDR2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P02HD/DDesigner's Data SheetMMSF3P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V

 4.2. Size:97K  onsemi
 mmsf3p02hd.pdf pdf_icon

MMSF3P02HDR2

MMSF3P02HDPreferred DevicePower MOSFET3 Amps, 20 VoltsP-Channel SO-8These miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time.3 AMPERES, 20 VOLTSMiniMOSt devices are desi

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUK7616-55A | CSD85312Q3E | AP98T03GP-HF | FTK5N80DD

 

 
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