MMSF3P02HDR2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMSF3P02HDR2

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 135 nS

Cossⓘ - Capacitancia de salida: 740 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: SO-8

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MMSF3P02HDR2 datasheet

 ..1. Size:129K  onsemi
 mmsf3p02hdr2.pdf pdf_icon

MMSF3P02HDR2

MMSF3P02HD Power MOSFET 3 Amps, 20 Volts P-Channel SO-8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. These 3 AMPERES, 20 VOLTS devices are designed for use in low v

 3.1. Size:302K  motorola
 mmsf3p02hdrev5.pdf pdf_icon

MMSF3P02HDR2

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF3P02HD/D Designer's Data Sheet MMSF3P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 V

 4.1. Size:259K  motorola
 mmsf3p02hd.pdf pdf_icon

MMSF3P02HDR2

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF3P02HD/D Designer's Data Sheet MMSF3P02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 V

 4.2. Size:97K  onsemi
 mmsf3p02hd.pdf pdf_icon

MMSF3P02HDR2

MMSF3P02HD Preferred Device Power MOSFET 3 Amps, 20 Volts P-Channel SO-8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. 3 AMPERES, 20 VOLTS MiniMOSt devices are desi

MOSTRAR MÁS

Otros transistores... MMP7401, MMP9435, MMP9435BDY, MMP9567, MMQ60R070PTH, MMQ60R115PCTH, MMQ60R115PTH, MMQ60R190PTH, IRF540, MMSF7P03HDR2, SM2A06NSU, SM3005NSF, SM3114NAU, SM3115NSU, SM3116NBU, SM3116NSU, SM3305PSQG